{
  "date" : "2008-07-31",
  "identifier_doecontract" : "",
  "subject" : "36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL-PHASE TRANSFORMATIONS; CRYSTALS; FILMS; HYDROGEN; INFRARED SPECTRA; METHANE; NANOSTRUCTURES; PLASMA; RADICALS; SCANNING ELECTRON MICROSCOPY; SILANES; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY",
  "description" : "Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane diluted with hydrogen at a substrate temperature of 500 {sup o}C. The effect of different hydrogen dilution ratios X [hydrogen flow (sccm) / silane + methane flow (sccm)] on the growth of nc-SiC films is investigated by X-ray diffraction, scanning electron microscopy, Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). At a low hydrogen dilution ratio X, cubic silicon carbide is the main crystal phase; whereas at a high hydrogen dilution ratio X, hexagonal silicon carbide is the main crystal phase. The SiC crystal phase transformation may be explained by the different surface mobility of reactive Si-based and C-based radicals deposited at different hydrogen dilution ratios X. The FTIR and XPS analyses show that the Si-C bonds are the main bonds in the films and elemental composition of SiC is nearly stoichiometric with almost equal share of silicon and carbon atoms.",
  "language" : "English",
  "identifier_report" : "",
  "publisher_sponsor" : "",
  "publisher_country" : "Netherlands",
  "source" : "NLN",
  "purl" : "",
  "title" : "Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition",
  "type" : "Journal Article",
  "subject_related" : "",
  "relation" : "Journal Name: Thin Solid Films; Journal Volume: 516; Journal Issue: 18; Other Information: DOI: 10.1016/j.tsf.2007.10.091; PII: S0040-6090(07)01769-5; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)",
  "entry_date" : "2010-01-01",
  "subject_list" : [ "36 MATERIALS SCIENCE", "CHEMICAL VAPOR DEPOSITION", "CRYSTAL GROWTH", "CRYSTAL-PHASE TRANSFORMATIONS", "CRYSTALS", "FILMS", "HYDROGEN", "INFRARED SPECTRA", "METHANE", "NANOSTRUCTURES", "PLASMA", "RADICALS", "SCANNING ELECTRON MICROSCOPY", "SILANES", "SILICON CARBIDES", "TEMPERATURE RANGE 0400-1000 K", "X-RAY DIFFRACTION", "X-RAY PHOTOELECTRON SPECTROSCOPY" ],
  "publisher_availability" : "Available from http://dx.doi.org/10.1016/j.tsf.2007.10.091;INIS",
  "rights" : "",
  "announced_date" : "2009-02-26",
  "type_qualifier" : "",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "",
  "journal_volume" : "516",
  "creator" : "Qijin, Cheng [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]; Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]; Xu, S [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]; Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg; Chai, J W; Huang, S Y; Ren, Y P; Long, J D; Rutkevych, P P [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]; Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]; Ostrikov, K [Plasma Nanoscience at Complex Systems, School of Physics, University of Sydney, Sydney NSW 2006 (Australia)]; Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]",
  "site_ownership_code" : "NLN",
  "osti_id" : "21123131",
  "journal_issue" : "18",
  "resource_type" : "JOUR",
  "format" : "Medium: X; Size: page(s) 5991-5995",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/21123131",
  "publication_year" : 2008,
  "subject_list_commas" : "36 MATERIALS SCIENCE, CHEMICAL VAPOR DEPOSITION, CRYSTAL GROWTH, CRYSTAL-PHASE TRANSFORMATIONS, CRYSTALS, FILMS, HYDROGEN, INFRARED SPECTRA, METHANE, NANOSTRUCTURES, PLASMA, RADICALS, SCANNING ELECTRON MICROSCOPY, SILANES, SILICON CARBIDES, TEMPERATURE RANGE 0400-1000 K, X-RAY DIFFRACTION, X-RAY PHOTOELECTRON SPECTROSCOPY",
  "publisher" : "",
  "identifier_other" : "Journal ID: ISSN 0040-6090; THSFAP; TRN: NL08S9013005834",
  "publisher_research" : "",
  "creators_list" : [ "Qijin, Cheng [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]", "Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]", "Xu, S [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]", "Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg", "Chai, J W", "Huang, S Y", "Ren, Y P", "Long, J D", "Rutkevych, P P [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]", "Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]", "Ostrikov, K [Plasma Nanoscience at Complex Systems, School of Physics, University of Sydney, Sydney NSW 2006 (Australia)]", "Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]" ],
  "doi" : "https://doi.org/10.1016/j.tsf.2007.10.091"
}