Abstract
In the context of photoelectrochemical water-splitting, tungsten oxide films have been fabricated at low processing temperatures (<250{sup o}C) by reactive sputtering from tungsten targets in an argon/oxygen ambient. The films have a dense, compact morphology and show columnar growth. Amorphous and highly polycrystalline films can be produced depending on the deposition conditions; polycrystalline phases appear only at higher temperatures and under certain sputter target conditions. Large crystallites proved beneficial to photoelectrochemical performance. A maximum photocurrent of 2.7mA/cm{sup 2} (at 1.6 V vs SCE) was observed in 0.33MH{sub 3}PO{sub 4} under AM 1.5 Global illumination, exceeding published results for material fabricated at higher temperatures (in the 400-600{sup o}C range). Doping of sputtered tungsten oxide films with nitrogen results in a red-shifted absorption edge, but so far not in increased photocurrents. The maximum photocurrent of a nitrogen-doped sample was measured at 2.3mA/cm{sup 2} (at 1.6 V vs SCE). A multi-junction photoanode based on the best available sputtered WO{sub 3} film and an amorphous silicon photovoltaic device is projected to operate at 2.2% solar-to-hydrogen efficiency. (author)
Marsen, Bjorn;
Miller, Eric L;
Paluselli, Daniela;
Rocheleau, Richard E
[1]
- Hawaii Natural Energy Institute, University of Hawaii at Manoa, Honolulu, HI 96822 (United States)
Citation Formats
Marsen, Bjorn, Miller, Eric L, Paluselli, Daniela, and Rocheleau, Richard E.
Progress in sputtered tungsten trioxide for photoelectrode applications.
United Kingdom: N. p.,
2007.
Web.
doi:10.1016/J.IJHYDENE.2006.01.022.
Marsen, Bjorn, Miller, Eric L, Paluselli, Daniela, & Rocheleau, Richard E.
Progress in sputtered tungsten trioxide for photoelectrode applications.
United Kingdom.
https://doi.org/10.1016/J.IJHYDENE.2006.01.022
Marsen, Bjorn, Miller, Eric L, Paluselli, Daniela, and Rocheleau, Richard E.
2007.
"Progress in sputtered tungsten trioxide for photoelectrode applications."
United Kingdom.
https://doi.org/10.1016/J.IJHYDENE.2006.01.022.
@misc{etde_20969400,
title = {Progress in sputtered tungsten trioxide for photoelectrode applications}
author = {Marsen, Bjorn, Miller, Eric L, Paluselli, Daniela, and Rocheleau, Richard E}
abstractNote = {In the context of photoelectrochemical water-splitting, tungsten oxide films have been fabricated at low processing temperatures (<250{sup o}C) by reactive sputtering from tungsten targets in an argon/oxygen ambient. The films have a dense, compact morphology and show columnar growth. Amorphous and highly polycrystalline films can be produced depending on the deposition conditions; polycrystalline phases appear only at higher temperatures and under certain sputter target conditions. Large crystallites proved beneficial to photoelectrochemical performance. A maximum photocurrent of 2.7mA/cm{sup 2} (at 1.6 V vs SCE) was observed in 0.33MH{sub 3}PO{sub 4} under AM 1.5 Global illumination, exceeding published results for material fabricated at higher temperatures (in the 400-600{sup o}C range). Doping of sputtered tungsten oxide films with nitrogen results in a red-shifted absorption edge, but so far not in increased photocurrents. The maximum photocurrent of a nitrogen-doped sample was measured at 2.3mA/cm{sup 2} (at 1.6 V vs SCE). A multi-junction photoanode based on the best available sputtered WO{sub 3} film and an amorphous silicon photovoltaic device is projected to operate at 2.2% solar-to-hydrogen efficiency. (author)}
doi = {10.1016/J.IJHYDENE.2006.01.022}
journal = []
issue = {15}
volume = {32}
place = {United Kingdom}
year = {2007}
month = {Oct}
}
title = {Progress in sputtered tungsten trioxide for photoelectrode applications}
author = {Marsen, Bjorn, Miller, Eric L, Paluselli, Daniela, and Rocheleau, Richard E}
abstractNote = {In the context of photoelectrochemical water-splitting, tungsten oxide films have been fabricated at low processing temperatures (<250{sup o}C) by reactive sputtering from tungsten targets in an argon/oxygen ambient. The films have a dense, compact morphology and show columnar growth. Amorphous and highly polycrystalline films can be produced depending on the deposition conditions; polycrystalline phases appear only at higher temperatures and under certain sputter target conditions. Large crystallites proved beneficial to photoelectrochemical performance. A maximum photocurrent of 2.7mA/cm{sup 2} (at 1.6 V vs SCE) was observed in 0.33MH{sub 3}PO{sub 4} under AM 1.5 Global illumination, exceeding published results for material fabricated at higher temperatures (in the 400-600{sup o}C range). Doping of sputtered tungsten oxide films with nitrogen results in a red-shifted absorption edge, but so far not in increased photocurrents. The maximum photocurrent of a nitrogen-doped sample was measured at 2.3mA/cm{sup 2} (at 1.6 V vs SCE). A multi-junction photoanode based on the best available sputtered WO{sub 3} film and an amorphous silicon photovoltaic device is projected to operate at 2.2% solar-to-hydrogen efficiency. (author)}
doi = {10.1016/J.IJHYDENE.2006.01.022}
journal = []
issue = {15}
volume = {32}
place = {United Kingdom}
year = {2007}
month = {Oct}
}