Abstract
ZnO thin films were deposited using Diethylainc and N{sub 2}O gas by plasma enhanced CVD(PECVD) at low substrate temperatures below 300{sup C}. The Effect of deposition parameters on the growth rate and the structural properties was determined at various deposition conditions. Crystallized ZnO thin films were successfully deposited even at 150{sup C} of substrate temperature. Above 200{sup C}, c-axis oriented ZnO thin films, of which a standard deviation of X-ray rocking curve was less than 6{sup ,} were deposited on glass substrates. The variation of deposition rate showed different trends depending on substrate temperature and RF-input power. According to the deposition rate behavior as a function of substrate temperature, the transition points were observed resulting from crystallization of ZnO thin films. The activation energies for the deposition of ZnO thin films were 3.1KJ/mol and 1.9KJ/mol for the rf powers of 200W and 250W, respectively. (author). 13 refs., 9 figs.
Citation Formats
Kim, Y J, and Kim, H J.
The Effects of Deposition Conditions on Deposition Rate and Crystallinity of ZnO thin Films Deposited by PECVD.
Korea, Republic of: N. p.,
1994.
Web.
Kim, Y J, & Kim, H J.
The Effects of Deposition Conditions on Deposition Rate and Crystallinity of ZnO thin Films Deposited by PECVD.
Korea, Republic of.
Kim, Y J, and Kim, H J.
1994.
"The Effects of Deposition Conditions on Deposition Rate and Crystallinity of ZnO thin Films Deposited by PECVD."
Korea, Republic of.
@misc{etde_122849,
title = {The Effects of Deposition Conditions on Deposition Rate and Crystallinity of ZnO thin Films Deposited by PECVD}
author = {Kim, Y J, and Kim, H J}
abstractNote = {ZnO thin films were deposited using Diethylainc and N{sub 2}O gas by plasma enhanced CVD(PECVD) at low substrate temperatures below 300{sup C}. The Effect of deposition parameters on the growth rate and the structural properties was determined at various deposition conditions. Crystallized ZnO thin films were successfully deposited even at 150{sup C} of substrate temperature. Above 200{sup C}, c-axis oriented ZnO thin films, of which a standard deviation of X-ray rocking curve was less than 6{sup ,} were deposited on glass substrates. The variation of deposition rate showed different trends depending on substrate temperature and RF-input power. According to the deposition rate behavior as a function of substrate temperature, the transition points were observed resulting from crystallization of ZnO thin films. The activation energies for the deposition of ZnO thin films were 3.1KJ/mol and 1.9KJ/mol for the rf powers of 200W and 250W, respectively. (author). 13 refs., 9 figs.}
journal = []
issue = {1}
volume = {4}
journal type = {AC}
place = {Korea, Republic of}
year = {1994}
month = {Feb}
}
title = {The Effects of Deposition Conditions on Deposition Rate and Crystallinity of ZnO thin Films Deposited by PECVD}
author = {Kim, Y J, and Kim, H J}
abstractNote = {ZnO thin films were deposited using Diethylainc and N{sub 2}O gas by plasma enhanced CVD(PECVD) at low substrate temperatures below 300{sup C}. The Effect of deposition parameters on the growth rate and the structural properties was determined at various deposition conditions. Crystallized ZnO thin films were successfully deposited even at 150{sup C} of substrate temperature. Above 200{sup C}, c-axis oriented ZnO thin films, of which a standard deviation of X-ray rocking curve was less than 6{sup ,} were deposited on glass substrates. The variation of deposition rate showed different trends depending on substrate temperature and RF-input power. According to the deposition rate behavior as a function of substrate temperature, the transition points were observed resulting from crystallization of ZnO thin films. The activation energies for the deposition of ZnO thin films were 3.1KJ/mol and 1.9KJ/mol for the rf powers of 200W and 250W, respectively. (author). 13 refs., 9 figs.}
journal = []
issue = {1}
volume = {4}
journal type = {AC}
place = {Korea, Republic of}
year = {1994}
month = {Feb}
}