{
  "date" : "1994-02-01",
  "identifier_doecontract" : "",
  "subject" : "36 MATERIALS SCIENCE; ZINC OXIDES; THIN FILMS; PLASMA; DEPOSITION; SUBSTRATES; ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; GROWTH; DIAGRAMS; EXPERIMENTAL DATA",
  "description" : "ZnO thin films were deposited using Diethylainc and N{sub 2}O gas by plasma enhanced CVD(PECVD) at low substrate temperatures below 300{sup C}. The Effect of deposition parameters on the growth rate and the structural properties was determined at various deposition conditions. Crystallized ZnO thin films were successfully deposited even at 150{sup C} of substrate temperature. Above 200{sup C}, c-axis oriented ZnO thin films, of which a standard deviation of X-ray rocking curve was less than 6{sup ,} were deposited on glass substrates. The variation of deposition rate showed different trends depending on substrate temperature and RF-input power. According to the deposition rate behavior as a function of substrate temperature, the transition points were observed resulting from crystallization of ZnO thin films. The activation energies for the deposition of ZnO thin films were 3.1KJ/mol and 1.9KJ/mol for the rf powers of 200W and 250W, respectively. (author). 13 refs., 9 figs.",
  "language" : "Korean",
  "identifier_report" : "",
  "publisher_sponsor" : "",
  "publisher_country" : "Korea, Republic of",
  "source" : "KR; SCA: 360602; 360104; PA: KR-95:000583; EDB-95:149493; SN: 95001472734",
  "purl" : "",
  "title" : "The Effects of Deposition Conditions on Deposition Rate and Crystallinity of ZnO thin Films Deposited by PECVD",
  "type" : "Journal Article",
  "subject_related" : "",
  "relation" : "Journal Name: Hangug Jaeryohag Hoeji (Korean Journal of Materials Research); Journal Volume: 4; Journal Issue: 1; Other Information: PBD: Feb 1994",
  "entry_date" : "2010-12-29",
  "subject_list" : [ "36 MATERIALS SCIENCE", "ZINC OXIDES", "THIN FILMS", "PLASMA", "DEPOSITION", "SUBSTRATES", "ACTIVATION ENERGY", "CHEMICAL VAPOR DEPOSITION", "GROWTH", "DIAGRAMS", "EXPERIMENTAL DATA" ],
  "publisher_availability" : "",
  "rights" : "",
  "announced_date" : "1995-11-24",
  "type_qualifier" : "",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "",
  "journal_volume" : "4",
  "creator" : "Kim, Y J [Kyonggi University (Korea, Republic of)]; Kim, H J [Seoul National Univ. (Korea, Republic of). Coll. of Engineering]",
  "site_ownership_code" : "KR",
  "osti_id" : "122849",
  "journal_issue" : "1",
  "resource_type" : "JOUR",
  "format" : "Medium: X; Size: pp. 90-96",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/122849",
  "publication_year" : 1994,
  "subject_list_commas" : "36 MATERIALS SCIENCE, ZINC OXIDES, THIN FILMS, PLASMA, DEPOSITION, SUBSTRATES, ACTIVATION ENERGY, CHEMICAL VAPOR DEPOSITION, GROWTH, DIAGRAMS, EXPERIMENTAL DATA",
  "publisher" : "",
  "identifier_other" : "Journal ID: HCHAEU; ISSN 1225-0562; TRN: KR9500583",
  "publisher_research" : "",
  "creators_list" : [ "Kim, Y J [Kyonggi University (Korea, Republic of)]", "Kim, H J [Seoul National Univ. (Korea, Republic of). Coll. of Engineering]" ],
  "doi" : "https://doi.org/"
}