The Effects of Deposition Conditions on Deposition Rate and Crystallinity of ZnO thin Films Deposited by PECVD Kim, Y J [Kyonggi University (Korea, Republic of)]; Kim, H J [Seoul National Univ. (Korea, Republic of). Coll. of Engineering] 36 MATERIALS SCIENCE; ZINC OXIDES; THIN FILMS; PLASMA; DEPOSITION; SUBSTRATES; ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; GROWTH; DIAGRAMS; EXPERIMENTAL DATA ZnO thin films were deposited using Diethylainc and N{sub 2}O gas by plasma enhanced CVD(PECVD) at low substrate temperatures below 300{sup C}. The Effect of deposition parameters on the growth rate and the structural properties was determined at various deposition conditions. Crystallized ZnO thin films were successfully deposited even at 150{sup C} of substrate temperature. Above 200{sup C}, c-axis oriented ZnO thin films, of which a standard deviation of X-ray rocking curve was less than 6{sup ,} were deposited on glass substrates. The variation of deposition rate showed different trends depending on substrate temperature and RF-input power. According to the deposition rate behavior as a function of substrate temperature, the transition points were observed resulting from crystallization of ZnO thin films. The activation energies for the deposition of ZnO thin films were 3.1KJ/mol and 1.9KJ/mol for the rf powers of 200W and 250W, respectively. (author). 13 refs., 9 figs. Korea, Republic of 1994-02-01 Korean Journal Article Journal Name: Hangug Jaeryohag Hoeji (Korean Journal of Materials Research); Journal Volume: 4; Journal Issue: 1; Other Information: PBD: Feb 1994 Medium: X; Size: pp. 90-96 https://doi.org/ [] 1 4 Journal ID: HCHAEU; ISSN 1225-0562; TRN: KR9500583 KR; SCA: 360602; 360104; PA: KR-95:000583; EDB-95:149493; SN: 95001472734 2010-12-29 122849