Nanoeletromechanical switch and logic circuits formed therefrom
Abstract
A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 985222
- Patent Number(s):
- 7719318
- Application Number:
- 12/265,200
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01H - ELECTRIC SWITCHES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Nordquist, Christopher D, and Czaplewski, David A. Nanoeletromechanical switch and logic circuits formed therefrom. United States: N. p., 2010.
Web.
Nordquist, Christopher D, & Czaplewski, David A. Nanoeletromechanical switch and logic circuits formed therefrom. United States.
Nordquist, Christopher D, and Czaplewski, David A. Tue .
"Nanoeletromechanical switch and logic circuits formed therefrom". United States. https://www.osti.gov/servlets/purl/985222.
@article{osti_985222,
title = {Nanoeletromechanical switch and logic circuits formed therefrom},
author = {Nordquist, Christopher D and Czaplewski, David A},
abstractNote = {A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 18 00:00:00 EDT 2010},
month = {Tue May 18 00:00:00 EDT 2010}
}
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