Integration of planar transformer and/or planar inductor with power switches in power converter
Abstract
A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.
- Inventors:
-
- Canton, MI
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 918896
- Patent Number(s):
- 7289329
- Application Number:
- 10/964,000
- Assignee:
- Siemens VDO Automotive Corporation (Auburn Hills, MI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Chen, Kanghua, Ahmed, Sayeed, and Zhu, Lizhi. Integration of planar transformer and/or planar inductor with power switches in power converter. United States: N. p., 2007.
Web.
Chen, Kanghua, Ahmed, Sayeed, & Zhu, Lizhi. Integration of planar transformer and/or planar inductor with power switches in power converter. United States.
Chen, Kanghua, Ahmed, Sayeed, and Zhu, Lizhi. Tue .
"Integration of planar transformer and/or planar inductor with power switches in power converter". United States. https://www.osti.gov/servlets/purl/918896.
@article{osti_918896,
title = {Integration of planar transformer and/or planar inductor with power switches in power converter},
author = {Chen, Kanghua and Ahmed, Sayeed and Zhu, Lizhi},
abstractNote = {A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 30 00:00:00 EDT 2007},
month = {Tue Oct 30 00:00:00 EDT 2007}
}
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