Memory device using movement of protons
Abstract
An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.
- Inventors:
-
- Albuquerque, NM
- St. Martin le Vinoux, FR
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873344
- Patent Number(s):
- 6140157
- Assignee:
- Sandia Corporation (Albuquerque, NM); Science & Technology Corporation at University of New Mexico (Albuquerque, NM); France Telecom/CNET (Paris, FR)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- memory; device; movement; protons; electrically; written; element; utilizing; motion; dielectric; layer; surrounded; layers; confine; electrode; means; attached; surrounding; change; spatial; position; preferably; constructed; silicon-silicon; dioxide-silicon; layered; structure; introduced; laterally; exposed; edges; silicon; dioxide; temperature; anneal; atmosphere; containing; hydrogen; gas; operates; power; nonvolatile; radiation; tolerant; compatible; convention; processing; integration; microelectronic; elements; substrate; addition; optically; active; optical; spatial position; layered structure; means attached; memory device; preferably constructed; atmosphere containing; containing hydrogen; memory element; dielectric layer; silicon layer; hydrogen gas; silicon substrate; oxide layer; active layer; silicon dioxide; optically active; radiation tolerant; surrounding layers; written memory; silicon-silicon dioxide-silicon; preferably nonvolatile; optical memory; electrically written; temperature anneal; electrode means; device operates; exposed edges; element utilizing; dioxide-silicon layered; layer surrounded; convention silicon; silicon layered; dioxide layer; /438/
Citation Formats
Warren, William L, Vanheusden, Karel J. R., Fleetwood, Daniel M, and Devine, Roderick A. B. Memory device using movement of protons. United States: N. p., 2000.
Web.
Warren, William L, Vanheusden, Karel J. R., Fleetwood, Daniel M, & Devine, Roderick A. B. Memory device using movement of protons. United States.
Warren, William L, Vanheusden, Karel J. R., Fleetwood, Daniel M, and Devine, Roderick A. B. Sat .
"Memory device using movement of protons". United States. https://www.osti.gov/servlets/purl/873344.
@article{osti_873344,
title = {Memory device using movement of protons},
author = {Warren, William L and Vanheusden, Karel J. R. and Fleetwood, Daniel M and Devine, Roderick A. B.},
abstractNote = {An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}