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Title: Memory device using movement of protons

Abstract

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia Corporation
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
675846
Patent Number(s):
5,830,575
Application Number:
PAN: 8-714,547
Assignee:
Sandia National Labs., Albuquerque, NM (United States) SNL; SCA: 426000; 990200; PA: EDB-99:003071; SN: 98002027971
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 3 Nov 1998
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 99 MATHEMATICS, COMPUTERS, INFORMATION SCIENCE, MANAGEMENT, LAW, MISCELLANEOUS; MEMORY DEVICES; DESIGN; DIELECTRIC MATERIALS; PROTONS; MICROELECTRONICS; FABRICATION; SILICON OXIDES; SILICON

Citation Formats

Warren, W.L., Vanheusden, K.J.R., Fleetwood, D.M., and Devine, R.A.B. Memory device using movement of protons. United States: N. p., 1998. Web.
Warren, W.L., Vanheusden, K.J.R., Fleetwood, D.M., & Devine, R.A.B. Memory device using movement of protons. United States.
Warren, W.L., Vanheusden, K.J.R., Fleetwood, D.M., and Devine, R.A.B. Tue . "Memory device using movement of protons". United States.
@article{osti_675846,
title = {Memory device using movement of protons},
author = {Warren, W.L. and Vanheusden, K.J.R. and Fleetwood, D.M. and Devine, R.A.B.},
abstractNote = {An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {11}
}