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Title: Devices and methods for electrochemical liquid phase epitaxy

Abstract

Electrochemical liquid phase epitaxy (ec-LPE) processes and devices are provided that can form precipitated epitaxial crystalline films or layers on a substrate. The precipitated films may comprise a semiconductor, such as germanium, silicon, or carbon. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid metal electrode (e.g., Hg pool) near an interface region with a substrate yields a polycrystalline semiconductor material deposited as an epitaxial film. Reactor cells for use in an electrochemical liquid phase epitaxy (ec-LPE) device are also provided that include porous membranes to facilitate formation of the precipitated epitaxial crystalline films.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1632466
Patent Number(s):
10538860
Application Number:
15/865,432
Assignee:
The Regents of the University of Michigan (Ann Arbor, MI)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000523
Resource Type:
Patent
Resource Relation:
Patent File Date: 01/09/2018
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Maldonado, Stephen, DeMuth, Joshua, and Fahrenkrug, Eli. Devices and methods for electrochemical liquid phase epitaxy. United States: N. p., 2020. Web.
Maldonado, Stephen, DeMuth, Joshua, & Fahrenkrug, Eli. Devices and methods for electrochemical liquid phase epitaxy. United States.
Maldonado, Stephen, DeMuth, Joshua, and Fahrenkrug, Eli. Tue . "Devices and methods for electrochemical liquid phase epitaxy". United States. https://www.osti.gov/servlets/purl/1632466.
@article{osti_1632466,
title = {Devices and methods for electrochemical liquid phase epitaxy},
author = {Maldonado, Stephen and DeMuth, Joshua and Fahrenkrug, Eli},
abstractNote = {Electrochemical liquid phase epitaxy (ec-LPE) processes and devices are provided that can form precipitated epitaxial crystalline films or layers on a substrate. The precipitated films may comprise a semiconductor, such as germanium, silicon, or carbon. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid metal electrode (e.g., Hg pool) near an interface region with a substrate yields a polycrystalline semiconductor material deposited as an epitaxial film. Reactor cells for use in an electrochemical liquid phase epitaxy (ec-LPE) device are also provided that include porous membranes to facilitate formation of the precipitated epitaxial crystalline films.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 21 00:00:00 EST 2020},
month = {Tue Jan 21 00:00:00 EST 2020}
}

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