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Title: Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same

Abstract

An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

Inventors:
 [1];  [1];  [1]
  1. Knoxville, TN
Issue Date:
Research Org.:
UT-Battelle LLC/ORNL, Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1068840
Patent Number(s):
8221909
Application Number:
12/947,911
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Aytug, Tolga, Paranthaman, Mariappan Parans, and Polat, Ozgur. Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same. United States: N. p., 2012. Web.
Aytug, Tolga, Paranthaman, Mariappan Parans, & Polat, Ozgur. Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same. United States.
Aytug, Tolga, Paranthaman, Mariappan Parans, and Polat, Ozgur. Tue . "Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same". United States. https://www.osti.gov/servlets/purl/1068840.
@article{osti_1068840,
title = {Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same},
author = {Aytug, Tolga and Paranthaman, Mariappan Parans and Polat, Ozgur},
abstractNote = {An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {7}
}

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Works referenced in this record:

Structural phase transitions and stress accommodation in ( La 0.67 Ca 0.33 MnO 3 ) 1 x : ( MgO ) x composite films
journal, September 2002


Growth of YBCO films on MgO-based rolling-assisted biaxially textured substrates templates
journal, December 2004


Processing and characterization of LaMnO3-buffered layer on IBAD-MgO template
journal, September 2008


Analysis of precursors for crystal growth of YBaCuO thin films in magnetron sputtering deposition
journal, February 2009


The influence of filament arrangement on current distribution and AC loss in Bi-2223/Ag tapes
journal, February 2004


Low AC Loss Structures in YBCO Coated Conductors With Filamentary Current Sharing
journal, June 2005


Fabrication of highly textured IBAD-MgO template by continuous reel-to-reel process and its characterization
journal, October 2007


Growth of Lanthanum Manganate Buffer Layers for Coated Conductors via a Metal-Organic Decomposition Process
journal, June 2005


YBCO films grown by reactive co-evaporation on simplified IBAD-MgO coated conductor templates
journal, December 2009


Properties of YBCO on ${\rm LaMnO}_{3}$-Capped IBAD MgO-Templates Without Homo-Epitaxial MgO Layer
journal, June 2009


Deposition of LaMnO3 buffer layer on IBAD-MgO template by reactive DC sputtering
journal, October 2009