Use of surfactants to control island size and density
Abstract
Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.
- Inventors:
- Issue Date:
- Research Org.:
- University of Utah Research Foundation, Salt Lake City, UT (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1375209
- Patent Number(s):
- 9735008
- Application Number:
- 14/063,143
- Assignee:
- University of Utah Research Foundation
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-04ER46148
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Oct 25
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Merrell, Jason, Liu, Feng, and Stringfellow, Gerald B. Use of surfactants to control island size and density. United States: N. p., 2017.
Web.
Merrell, Jason, Liu, Feng, & Stringfellow, Gerald B. Use of surfactants to control island size and density. United States.
Merrell, Jason, Liu, Feng, and Stringfellow, Gerald B. Tue .
"Use of surfactants to control island size and density". United States. https://www.osti.gov/servlets/purl/1375209.
@article{osti_1375209,
title = {Use of surfactants to control island size and density},
author = {Merrell, Jason and Liu, Feng and Stringfellow, Gerald B.},
abstractNote = {Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 15 00:00:00 EDT 2017},
month = {Tue Aug 15 00:00:00 EDT 2017}
}
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Works referenced in this record:
The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy
journal, September 2002
- Zhang, L.; Tang, H. F.; Schieke, J.
- Journal of Applied Physics, Vol. 92, Issue 5, p. 2304-2309
Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD
journal, February 2011
- Sadasivam, Karthikeyan Giri; Shim, Jong-In; Lee, June Key
- Journal of Nanoscience and Nanotechnology, Vol. 11, Issue 2, p. 1787-1790