ZnO buffer layer for metal films on silicon substrates
Abstract
Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1159829
- Patent Number(s):
- 8835023
- Application Number:
- 13/584,641
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Ihlefeld, Jon. ZnO buffer layer for metal films on silicon substrates. United States: N. p., 2014.
Web.
Ihlefeld, Jon. ZnO buffer layer for metal films on silicon substrates. United States.
Ihlefeld, Jon. Tue .
"ZnO buffer layer for metal films on silicon substrates". United States. https://www.osti.gov/servlets/purl/1159829.
@article{osti_1159829,
title = {ZnO buffer layer for metal films on silicon substrates},
author = {Ihlefeld, Jon},
abstractNote = {Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 16 00:00:00 EDT 2014},
month = {Tue Sep 16 00:00:00 EDT 2014}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Film transfer method
patent, December 2003
- Wada, Takatsugu; Nojiri, Hidetoshi; Akaike, Masatake
- US Patent Document 6,666,943
Film bulk acoustic resonator and method of making the same
patent, May 2004
- Nakatani, Tadashi; Miyashita, Tsutomu; Satoh, Yoshio
- US Patent Document 6,732,415
Piezoelectric Device, Ink-Jet Head Using the Same, and Process for Producing the Same
patent-application, March 2009
- Fujii, Takamichi; Nihei, Yasukazu; Hishinuma, Yoshikazu
- US Patent Application 12/206518; 20090066763
A wideband SAW convolver utilizing Sezawa waves in the metal‐ZnO‐SiO 2 ‐Si configuration
journal, May 1978
- Elliott, J. K.; Gunshor, R. L.; Pierret, R. F.
- Applied Physics Letters, Vol. 32, Issue 9
Metallization schemes for dielectric thin film capacitors
journal, February 1997
- Al-Shareef, H. N.; Dimos, D.; Tuttle, B. A.
- Journal of Materials Research, Vol. 12, Issue 2
Surface acoustic wave H/sub 2/ sensor on silicon substrate
conference, January 1988
- Caliendo, C.; D'Amico, A.; Varadi, P.
- IEEE 1988 Ultrasonics Symposium Proceedings.
Permittivity scaling in Ba1−xSrxTiO3 thin films and ceramics
journal, February 2011
- Aygün, Seymen M.; Ihlefeld, Jon F.; Borland, William J.
- Journal of Applied Physics, Vol. 109, Issue 3
Extrinsic scaling effects on the dielectric response of ferroelectric thin films
journal, April 2008
- Ihlefeld, Jon F.; Vodnick, Aaron M.; Baker, Shefford P.
- Journal of Applied Physics, Vol. 103, Issue 7
Control of the morphology of CSD-prepared (Ba,Sr)TiO3 thin films
journal, June 1999
- Hoffmann, Susanne; Waser, Rainer
- Journal of the European Ceramic Society, Vol. 19, Issue 6-7, p. 1339-1343
Control of Microstructure and Orientation in Solution-Deposited BaTiO 3 and SrTiO 3 Thin Films
journal, September 1999
- Schwartz, Robert W.; Clem, Paul G.; Voigt, James A.
- Journal of the American Ceramic Society, Vol. 82, Issue 9