Title: Propagation of misfit dislocations from buffer/Si interface into Si

Abstract

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Inventors:

Liliental-Weber, Zuzanna ^[1]; Maltez, Rogerio Luis ^[2]; Morkoc, Hadis ^[3]; Xie, Jinqiao ^[4]

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+ Show Inventor Affiliations

1. El Sobrante, CA
2. Porto Alegre, BR
3. Richmond, VA
4. Raleigh, VA

Issue Date:

Tue Aug 30 00:00:00 EDT 2011

Research Org.:

Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1023920

Patent Number(s):

8008181

Application Number:

12/540,274

Assignee:

The Regents of The University of California (Oakland, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02458 - {Nitrides}
H01L21/0254 - {Nitrides}
H01L21/02658 - {Pretreatments
H01L21/26506 - {in group IV semiconductors}
H01L31/0304 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L33/007 - {comprising nitride compounds}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S5/021 - {Silicon based substrates}
H01S5/32341 - {blue laser based on GaN or GaP}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/544 - Solar cells from Group III-V materials

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DOE Contract Number:  

AC02-05CH11231

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE