Dislocation glide suppression for misfit dislocation free heteroepitaxy
Abstract
An epitaxial structure includes a semiconductor substrate, a dislocation blocking layer; and one or more active layers.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 2293795
- Patent Number(s):
- 11804525
- Application Number:
- 17/066,876
- Assignee:
- The Regents of the University of California (Oakland, CA)
- DOE Contract Number:
- AR0000672
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10/09/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Bowers, John, Norman, Justin, Mukherjee, Kunal, Selvidge, Jennifer, and Hughes, Eamonn. Dislocation glide suppression for misfit dislocation free heteroepitaxy. United States: N. p., 2023.
Web.
Bowers, John, Norman, Justin, Mukherjee, Kunal, Selvidge, Jennifer, & Hughes, Eamonn. Dislocation glide suppression for misfit dislocation free heteroepitaxy. United States.
Bowers, John, Norman, Justin, Mukherjee, Kunal, Selvidge, Jennifer, and Hughes, Eamonn. Tue .
"Dislocation glide suppression for misfit dislocation free heteroepitaxy". United States. https://www.osti.gov/servlets/purl/2293795.
@article{osti_2293795,
title = {Dislocation glide suppression for misfit dislocation free heteroepitaxy},
author = {Bowers, John and Norman, Justin and Mukherjee, Kunal and Selvidge, Jennifer and Hughes, Eamonn},
abstractNote = {An epitaxial structure includes a semiconductor substrate, a dislocation blocking layer; and one or more active layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2023},
month = {10}
}
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Works referenced in this record:
Non-radiative recombination at dislocations in InAs quantum dots grown on silicon
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- Selvidge, Jennifer; Norman, Justin; Salmon, Michael E.
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Compound semiconductor structures for optoelectronic devices
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- Zhang, Yong-Hang; Dowd, Philip; Braun, Wolfgang
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patent, December 2012
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