Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices
Abstract
A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 941132
- Patent Number(s):
- 7375332
- Application Number:
- 11/366,289
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Horn, Kevin M. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices. United States: N. p., 2008.
Web.
Horn, Kevin M. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices. United States.
Horn, Kevin M. Tue .
"Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices". United States. https://www.osti.gov/servlets/purl/941132.
@article{osti_941132,
title = {Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices},
author = {Horn, Kevin M},
abstractNote = {A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {5}
}