Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

Horn, Kevin M

Title: Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

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Abstract

A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

Inventors:

Horn, Kevin M ^[1]

Albuquerque, NM

Issue Date:: 2008-05-20

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 941132

Patent Number(s):: 7375332

Application Number:: 11/366,289

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES

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G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
G01R31/2881 - {related to environmental aspects other than temperature, e.g. humidity or vibrations}
G01R31/311 - of integrated circuits {

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

Citation Formats


                    Horn, Kevin M. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices.  United States: N. p., 2008. 
        Web.

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                    Horn, Kevin M. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices.  United States.

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                    Horn, Kevin M. Tue .  
        "Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices".  United States.  https://www.osti.gov/servlets/purl/941132.

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@article{osti_941132,

  title        = {Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices},

  author       = {Horn, Kevin M},

  abstractNote = {A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2008},

  month        = {5}

}

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