Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system
Abstract
Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.
- Inventors:
- Issue Date:
- Research Org.:
- National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1600434
- Patent Number(s):
- 10,516,068
- Application Number:
- 15/862,307
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 01/04/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Doty, F. Patrick, Yang, Pin, and Zhou, Xiaowang. Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system. United States: N. p., 2019.
Web.
Doty, F. Patrick, Yang, Pin, & Zhou, Xiaowang. Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system. United States.
Doty, F. Patrick, Yang, Pin, and Zhou, Xiaowang. Tue .
"Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system". United States. https://www.osti.gov/servlets/purl/1600434.
@article{osti_1600434,
title = {Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system},
author = {Doty, F. Patrick and Yang, Pin and Zhou, Xiaowang},
abstractNote = {Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {12}
}
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