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Title: Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system

Abstract

Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1600434
Patent Number(s):
10516068
Application Number:
15/862,307
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 01/04/2018
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Doty, F. Patrick, Yang, Pin, and Zhou, Xiaowang. Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system. United States: N. p., 2019. Web.
Doty, F. Patrick, Yang, Pin, & Zhou, Xiaowang. Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system. United States.
Doty, F. Patrick, Yang, Pin, and Zhou, Xiaowang. Tue . "Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system". United States. https://www.osti.gov/servlets/purl/1600434.
@article{osti_1600434,
title = {Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system},
author = {Doty, F. Patrick and Yang, Pin and Zhou, Xiaowang},
abstractNote = {Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {12}
}

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