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Title: Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices

Abstract

A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

Inventors:
Issue Date:
Research Org.:
SNL (Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1087890
Patent Number(s):
8,481,345
Application Number:
12/891,569
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Horn, Kevin M. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices. United States: N. p., 2013. Web.
Horn, Kevin M. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices. United States.
Horn, Kevin M. Tue . "Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices". United States. https://www.osti.gov/servlets/purl/1087890.
@article{osti_1087890,
title = {Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices},
author = {Horn, Kevin M.},
abstractNote = {A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {7}
}

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