Resistivity analysis
Abstract
According to an example embodiment of the present invention a semiconductor die having a resistive electrical connection is analyzed. Heat is directed to the die as the die is undergoing a state-changing operation to cause a failure due to suspect circuitry. The die is monitored, and a circuit path that electrically changes in response to the heat is detected and used to detect that a particular portion therein of the circuit is resistive. In this manner, the detection and localization of a semiconductor die defect that includes a resistive portion of a circuit path is enhanced.
- Inventors:
-
- Austin, TX
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 908393
- Patent Number(s):
- 7062399
- Application Number:
- 09/586,518
- Assignee:
- Advance Micro Devices, Inc. (Sunnyvale, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Bruce, Michael R, Bruce, Victoria J, Ring, Rosalinda M, Cole, Edward Jr I, Hawkins, Charles F, and Tangyungong, Paiboon. Resistivity analysis. United States: N. p., 2006.
Web.
Bruce, Michael R, Bruce, Victoria J, Ring, Rosalinda M, Cole, Edward Jr I, Hawkins, Charles F, & Tangyungong, Paiboon. Resistivity analysis. United States.
Bruce, Michael R, Bruce, Victoria J, Ring, Rosalinda M, Cole, Edward Jr I, Hawkins, Charles F, and Tangyungong, Paiboon. Tue .
"Resistivity analysis". United States. https://www.osti.gov/servlets/purl/908393.
@article{osti_908393,
title = {Resistivity analysis},
author = {Bruce, Michael R and Bruce, Victoria J and Ring, Rosalinda M and Cole, Edward Jr I and Hawkins, Charles F and Tangyungong, Paiboon},
abstractNote = {According to an example embodiment of the present invention a semiconductor die having a resistive electrical connection is analyzed. Heat is directed to the die as the die is undergoing a state-changing operation to cause a failure due to suspect circuitry. The die is monitored, and a circuit path that electrically changes in response to the heat is detected and used to detect that a particular portion therein of the circuit is resistive. In this manner, the detection and localization of a semiconductor die defect that includes a resistive portion of a circuit path is enhanced.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {6}
}
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