Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters
Abstract
A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.
- Inventors:
-
- Golden, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 874044
- Patent Number(s):
- 6300557
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- low-bandgap; double-heterostructure; inasp; gainas; photovoltaic; converters; pv; device; provided; including; optical; alignment; inp; 1-y; n-layer; formed; n-type; dopant; 1-x; absorber; layer; n-region; p-region; p-type; form; single; pn-junction; p-layer; layers; passivation; minority; carrier; confinement; n-type dopant; optical alignment; layer formed; minority carrier; p-type dopant; absorber layer; region formed; type dopant; carrier confinement; pv device; /136/257/
Citation Formats
Wanlass, Mark W. Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters. United States: N. p., 2001.
Web.
Wanlass, Mark W. Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters. United States.
Wanlass, Mark W. Mon .
"Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters". United States. https://www.osti.gov/servlets/purl/874044.
@article{osti_874044,
title = {Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters},
author = {Wanlass, Mark W},
abstractNote = {A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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