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Title: Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Abstract

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1234679
Patent Number(s):
9231135
Application Number:
14/285,468
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 May 22
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 30 DIRECT ENERGY CONVERSION

Citation Formats

Wanlass, Mark W., and Carapella, Jeffrey J.. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices. United States: N. p., 2016. Web.
Wanlass, Mark W., & Carapella, Jeffrey J.. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices. United States.
Wanlass, Mark W., and Carapella, Jeffrey J.. Tue . "Low-bandgap, monolithic, multi-bandgap, optoelectronic devices". United States. https://www.osti.gov/servlets/purl/1234679.
@article{osti_1234679,
title = {Low-bandgap, monolithic, multi-bandgap, optoelectronic devices},
author = {Wanlass, Mark W. and Carapella, Jeffrey J.},
abstractNote = {Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {1}
}

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