Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Title: Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Inventors:: Wanlass, Mark W.; Carapella, Jeffrey J.

Issue Date:: 2016-03-22

OSTI Identifier:: 1243315

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO) NREL

Patent Number(s):: 9,293,615

Application Number:: 14/855,776

Contract Number:: AC36-99GO10337

Resource Relation:: Patent File Date: 2015 Sep 16

Research Org:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 30 DIRECT ENERGY CONVERSION; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

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Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Patent Wanlass, Mark W. ; Carapella, Jeffrey J.

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Full Text Available July 2014
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Patent Wanlass, Mark W. ; Carapella, Jeffrey J.

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Full Text Available January 2016
High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

Patent Wanlass, Mark W

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.
Full Text Available November 2011
Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps

Patent Wanlass, Mark W ; Mascarenhas, Angelo

Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate highermore »« less
Full Text Available May 2012
High-efficiency, monolithic, multi-bandgap, tandem, photovoltaic energy converters

Patent Wanlass, Mark W

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.
Full Text Available May 2014