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Title: Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Abstract

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1243315
Patent Number(s):
9,293,615
Application Number:
14/855,776
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Sep 16
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Wanlass, Mark W., and Carapella, Jeffrey J. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices. United States: N. p., 2016. Web.
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Wanlass, Mark W., & Carapella, Jeffrey J. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices. United States.
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Wanlass, Mark W., and Carapella, Jeffrey J. Tue . "Low-bandgap, monolithic, multi-bandgap, optoelectronic devices". United States. https://www.osti.gov/servlets/purl/1243315.
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@article{osti_1243315,
title = {Low-bandgap, monolithic, multi-bandgap, optoelectronic devices},
author = {Wanlass, Mark W. and Carapella, Jeffrey J.},
abstractNote = {Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {3}
}
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