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Title: Geometric shape control of thin film ferroelectrics and resulting structures

Abstract

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

Inventors:
 [1];  [2]
  1. (Kingston, TN)
  2. (Oak Ridge, TN)
Issue Date:
Research Org.:
LOCKHEED MARTIN ENERGY RES COR
OSTI Identifier:
873055
Patent Number(s):
6080235
Assignee:
UT-Battelle, LLC (Oak Ridge, TN) ORNL
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
geometric; shape; control; film; ferroelectrics; resulting; structures; monolithic; crystalline; structure; method; involves; semiconductor; substrate; silicon; ferroelectric; batio; overlying; surface; atomic; layers; directly; overlie; controlling; geometry; build-up; appropriate; treatment; adjacent; boundary; in-plane; tensile; strain; relieved; extent; permit; poled; out-of-plane; effecting; switching; polarization; underlying; material; steps; involved; discontinuity; mechanical; restraint; atop; example; removing; built; building; mesa-shaped; inducing; beam; deposition; techniques; atomic layers; beam deposition; removing material; underlying substrate; semiconductor substrate; substrate material; deposition techniques; crystalline structure; ferroelectric film; geometric shape; deposition technique; appropriate treatment; shape control; resulting structure; line structure; /117/423/

Citation Formats

McKee, Rodney A., and Walker, Frederick J. Geometric shape control of thin film ferroelectrics and resulting structures. United States: N. p., 2000. Web.
McKee, Rodney A., & Walker, Frederick J. Geometric shape control of thin film ferroelectrics and resulting structures. United States.
McKee, Rodney A., and Walker, Frederick J. Sat . "Geometric shape control of thin film ferroelectrics and resulting structures". United States. https://www.osti.gov/servlets/purl/873055.
@article{osti_873055,
title = {Geometric shape control of thin film ferroelectrics and resulting structures},
author = {McKee, Rodney A. and Walker, Frederick J.},
abstractNote = {A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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