Geometric shape control of thin film ferroelectrics and resulting structures
Abstract
A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.
- Inventors:
-
- Kingston, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 873055
- Patent Number(s):
- 6080235
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC05-96OR22464
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- geometric; shape; control; film; ferroelectrics; resulting; structures; monolithic; crystalline; structure; method; involves; semiconductor; substrate; silicon; ferroelectric; batio; overlying; surface; atomic; layers; directly; overlie; controlling; geometry; build-up; appropriate; treatment; adjacent; boundary; in-plane; tensile; strain; relieved; extent; permit; poled; out-of-plane; effecting; switching; polarization; underlying; material; steps; involved; discontinuity; mechanical; restraint; atop; example; removing; built; building; mesa-shaped; inducing; beam; deposition; techniques; atomic layers; beam deposition; removing material; underlying substrate; semiconductor substrate; substrate material; deposition techniques; crystalline structure; ferroelectric film; geometric shape; deposition technique; appropriate treatment; shape control; resulting structure; line structure; /117/423/
Citation Formats
McKee, Rodney A, and Walker, Frederick J. Geometric shape control of thin film ferroelectrics and resulting structures. United States: N. p., 2000.
Web.
McKee, Rodney A, & Walker, Frederick J. Geometric shape control of thin film ferroelectrics and resulting structures. United States.
McKee, Rodney A, and Walker, Frederick J. Sat .
"Geometric shape control of thin film ferroelectrics and resulting structures". United States. https://www.osti.gov/servlets/purl/873055.
@article{osti_873055,
title = {Geometric shape control of thin film ferroelectrics and resulting structures},
author = {McKee, Rodney A and Walker, Frederick J},
abstractNote = {A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}
Works referenced in this record:
Domain structure and polarization reversal in films of ferroelectric bismuth titanate
journal, February 1972
- Wu, S. Y.; Takei, W. J.; Francombe, M. H.
- Ferroelectrics, Vol. 3, Issue 1