Process for ion-assisted laser deposition of biaxially textured layer on substrate
Abstract
A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.
- Inventors:
-
- Walnut Creek, CA
- Berkeley, CA
- Palo Alto, CA
- Oakland, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 869972
- Patent Number(s):
- 5432151
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; ion-assisted; laser; deposition; biaxially; textured; layer; substrate; depositing; aligned; intermediate; non-single; crystal; disclosed; permits; subsequent; thereon; oriented; superconducting; film; comprises; ablation; material; capable; inhibiting; migration; materials; simultaneously; bombarding; beam; preferred; embodiment; carried; chamber; subsequently; deposit; aspect; optional; additional; bombardment; coated; biaxially oriented; conducting layer; subsequent deposition; superconducting film; axially aligned; biaxially textured; substrate material; preferred embodiment; single crystal; process comprises; intermediate layer; laser ablation; comprises depositing; material capable; coated substrate; laser deposition; textured layer; oriented superconducting; crystal substrate; conducting film; deposition thereon; superconducting layer; subsequently deposit; axially align; /505/427/
Citation Formats
Russo, Richard E, Reade, Ronald P, Garrison, Stephen M, and Berdahl, Paul. Process for ion-assisted laser deposition of biaxially textured layer on substrate. United States: N. p., 1995.
Web.
Russo, Richard E, Reade, Ronald P, Garrison, Stephen M, & Berdahl, Paul. Process for ion-assisted laser deposition of biaxially textured layer on substrate. United States.
Russo, Richard E, Reade, Ronald P, Garrison, Stephen M, and Berdahl, Paul. Sun .
"Process for ion-assisted laser deposition of biaxially textured layer on substrate". United States. https://www.osti.gov/servlets/purl/869972.
@article{osti_869972,
title = {Process for ion-assisted laser deposition of biaxially textured layer on substrate},
author = {Russo, Richard E and Reade, Ronald P and Garrison, Stephen M and Berdahl, Paul},
abstractNote = {A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}
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