Ferromagnetic thin films
Abstract
A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.
- Inventors:
-
- Berkeley, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 869657
- Patent Number(s):
- 5374472
- Assignee:
- Regents, University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- ferromagnetic; films; delta; -mn; 1-x; film; perpendicular; anisotropy; described; comprises; gaas; substrate; layer; undoped; overlying; bonded; thereto; thickness; ranging; 50; 100; nanometers; 20; 30; 05; bonded thereto; gaas substrate; /428/117/365/427/
Citation Formats
Krishnan, Kannan M. Ferromagnetic thin films. United States: N. p., 1994.
Web.
Krishnan, Kannan M. Ferromagnetic thin films. United States.
Krishnan, Kannan M. Sat .
"Ferromagnetic thin films". United States. https://www.osti.gov/servlets/purl/869657.
@article{osti_869657,
title = {Ferromagnetic thin films},
author = {Krishnan, Kannan M},
abstractNote = {A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}
Works referenced in this record:
Epitaxial ferromagnetic τ‐MnAl films on GaAs
journal, December 1990
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- Applied Physics Letters, Vol. 57, Issue 24
Magnetic and magneto‐optic properties of epitaxial ferromagnetic τ‐MnAl/(Al,Ga)As heterostructures
journal, March 1992
- Cheeks, T. L.; Brasil, M. J. S. P.; Sands, T.
- Applied Physics Letters, Vol. 60, Issue 11
Magnetic Tetragonal δ Phase in the Mn–Ga Binary
journal, April 1965
- Bither, Tom A.; Cloud, William H.
- Journal of Applied Physics, Vol. 36, Issue 4