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Title: Ferromagnetic thin films

A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.
Inventors:
 [1]
+ Show Author Affiliations
  1. (Berkeley, CA)
Issue Date:
OSTI Identifier:
869657
Assignee:
Regents, University of California (Oakland, CA) LBNL
Patent Number(s):
US 5374472
Contract Number:
AC03-76SF00098
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
Country of Publication:
United States
Language:
English
Subject:
ferromagnetic; films; delta; -mn; 1-x; film; perpendicular; anisotropy; described; comprises; gaas; substrate; layer; undoped; overlying; bonded; thereto; thickness; ranging; 50; 100; nanometers; 20; 30; 05; bonded thereto; gaas substrate; /428/117/365/427/

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