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Title: Ferromagnetic thin films

Abstract

A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

Inventors:
 [1]
  1. Berkeley, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
869657
Patent Number(s):
5374472
Assignee:
Regents, University of California (Oakland, CA)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
ferromagnetic; films; delta; -mn; 1-x; film; perpendicular; anisotropy; described; comprises; gaas; substrate; layer; undoped; overlying; bonded; thereto; thickness; ranging; 50; 100; nanometers; 20; 30; 05; bonded thereto; gaas substrate; /428/117/365/427/

Citation Formats

Krishnan, Kannan M. Ferromagnetic thin films. United States: N. p., 1994. Web.
Krishnan, Kannan M. Ferromagnetic thin films. United States.
Krishnan, Kannan M. Sat . "Ferromagnetic thin films". United States. https://www.osti.gov/servlets/purl/869657.
@article{osti_869657,
title = {Ferromagnetic thin films},
author = {Krishnan, Kannan M},
abstractNote = {A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

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