Ferromagnetic thin films

Title: Ferromagnetic thin films

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Abstract

A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

Inventors:

Krishnan, Kannan M ^[1]

Berkeley, CA

Issue Date:: 1994-01-01

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

OSTI Identifier:: 869657

Patent Number(s):: 5374472

Assignee:: Regents, University of California (Oakland, CA)

Patent Classifications (CPCs):: G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

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G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
G11B11/10586 - {characterised by the selection of the material}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/12729 - Group IIA metal-base component

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y25/00 - Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS
H01F10/3213 - {Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
H01F10/3286 - {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/12681 - Ga-, In-, Tl- or Group VA metal-base component

G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
G11B11/10582 - {Record carriers characterised by the selection of the material or by the structure or form}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/24942 - including components having same physical characteristic in differing degree
Y10T428/24975 - No layer or component greater than 5 mils thick

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DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: ferromagnetic; films; delta; -mn; 1-x; film; perpendicular; anisotropy; described; comprises; gaas; substrate; layer; undoped; overlying; bonded; thereto; thickness; ranging; 50; 100; nanometers; 20; 30; 05; bonded thereto; gaas substrate; /428/117/365/427/

Citation Formats


                    Krishnan, Kannan M. Ferromagnetic thin films.  United States: N. p., 1994. 
        Web.

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                    Krishnan, Kannan M. Ferromagnetic thin films.  United States.

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                    Krishnan, Kannan M. Sat .  
        "Ferromagnetic thin films".  United States.  https://www.osti.gov/servlets/purl/869657.

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@article{osti_869657,

  title        = {Ferromagnetic thin films},

  author       = {Krishnan, Kannan M},

  abstractNote = {A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {1}

}

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