Chemical vapor deposition of group IIIB metals
Abstract
Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.
- Inventors:
-
- Atlanta, GA
- Issue Date:
- Research Org.:
- Georgia Inst. of Tech., Atlanta, GA
- OSTI Identifier:
- 867186
- Patent Number(s):
- 4882206
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- FG05-86ER45266
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- chemical; vapor; deposition; iiib; metals; coatings; compounds; formed; heat; decomposable; organometallic; compound; formula; str1; metal; lanthanum; yttrium; alkyl; alkenyl; radical; containing; carbon; atoms; heated; substrate; decomposition; temperature; pure; obtained; sole; carried; nonoxidizing; conditions; intermetallic; telluride; deposited; tellurium; oxidizing conditions; chemical vapor; carbon atoms; vapor deposition; intermetallic compound; heated substrate; decomposition temperature; carbon atom; organometallic compound; intermetallic compounds; heat decomposable; pure metal; tellurium compound; iiib metals; metallic compound; decomposable organometallic; /427/
Citation Formats
Erbil, Ahmet. Chemical vapor deposition of group IIIB metals. United States: N. p., 1989.
Web.
Erbil, Ahmet. Chemical vapor deposition of group IIIB metals. United States.
Erbil, Ahmet. Sun .
"Chemical vapor deposition of group IIIB metals". United States. https://www.osti.gov/servlets/purl/867186.
@article{osti_867186,
title = {Chemical vapor deposition of group IIIB metals},
author = {Erbil, Ahmet},
abstractNote = {Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1989},
month = {Sun Jan 01 00:00:00 EST 1989}
}