Chemical vapor deposition of group IIIB metals
Abstract
Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7268848
- Patent Number(s):
- 4882206
- Application Number:
- PPN: US 7-210020
- Assignee:
- Georgia Tech Research Corp., Atlanta, GA (United States)
- DOE Contract Number:
- FG05-86ER45266
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 22 Jun 1988
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; INTERMETALLIC COMPOUNDS; CHEMICAL VAPOR DEPOSITION; LANTHANUM ALLOYS; METALS; TELLURIUM ALLOYS; VAPOR DEPOSITED COATINGS; ALLOYS; CHEMICAL COATING; COATINGS; DEPOSITION; ELEMENTS; RARE EARTH ALLOYS; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication
Citation Formats
Erbil, A. Chemical vapor deposition of group IIIB metals. United States: N. p., 1989.
Web.
Erbil, A. Chemical vapor deposition of group IIIB metals. United States.
Erbil, A. Tue .
"Chemical vapor deposition of group IIIB metals". United States.
@article{osti_7268848,
title = {Chemical vapor deposition of group IIIB metals},
author = {Erbil, A},
abstractNote = {Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {11}
}