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Title: Chemical vapor deposition of group IIIB metals

Abstract

Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

Inventors:
Issue Date:
OSTI Identifier:
7268848
Patent Number(s):
4882206 A
Application Number:
PPN: US 7-210020
Assignee:
Georgia Tech Research Corp., Atlanta, GA (United States) PTO; EDB-94-116216
DOE Contract Number:  
FG05-86ER45266
Resource Type:
Patent
Resource Relation:
Patent File Date: 22 Jun 1988
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INTERMETALLIC COMPOUNDS; CHEMICAL VAPOR DEPOSITION; LANTHANUM ALLOYS; METALS; TELLURIUM ALLOYS; VAPOR DEPOSITED COATINGS; ALLOYS; CHEMICAL COATING; COATINGS; DEPOSITION; ELEMENTS; RARE EARTH ALLOYS; SURFACE COATING; 360101* - Metals & Alloys- Preparation & Fabrication

Citation Formats

Erbil, A. Chemical vapor deposition of group IIIB metals. United States: N. p., 1989. Web.
Erbil, A. Chemical vapor deposition of group IIIB metals. United States.
Erbil, A. Tue . "Chemical vapor deposition of group IIIB metals". United States.
@article{osti_7268848,
title = {Chemical vapor deposition of group IIIB metals},
author = {Erbil, A.},
abstractNote = {Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {11}
}