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Title: Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.
Inventors:
Issue Date:
OSTI Identifier:
441868
Assignee:
Univ. of Chicago, IL (United States) PTO; SCA: 070300; 300800; PA: INS-97:004430; EDB-97:039292; SN: 97001739246
Patent Number(s):
US 5,605,171/A/
Application Number:
PAN: 8-517,001
Contract Number:
W-31109-ENG-38
Resource Relation:
Other Information: PBD: 25 Feb 1997
Research Org:
Univ. of Chicago, IL (United States)
Country of Publication:
United States
Language:
English
Subject:
07 ISOTOPE AND RADIATION SOURCE TECHNOLOGY; 30 DIRECT ENERGY CONVERSION; LIGHTING SYSTEMS; PHOTOVOLTAIC CELLS; POROUS MATERIALS; USES; SILICON; DESIGN; ILLUMINANCE; ELECTRON SOURCES; TRITIUM