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Title: Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.
Inventors:
 [1]
  1. (Downers Grove, IL)
Issue Date:
OSTI Identifier:
870842
Assignee:
University of Chicago (Chicago, IL) ANL
Patent Number(s):
US 5605171
Contract Number:
W-31109-ENG-38
Research Org:
Argonne National Laboratory (ANL), Argonne, IL
Country of Publication:
United States
Language:
English
Subject:
porous; silicon; embedded; tritium; stand-alone; prime; power; source; optoelectronic; applications; illumination; comprising; electrons; surface; interticies; total; porosity; range; 50; 90; disclosed; tritiated; photovoltaic; device; tritiated porous; source comprising; illumination source; porous silicon; power source; photovoltaic device; total porosity; electronic applications; stand-alone prime; optoelectronic applications; embedded tritium; prime power; /136/250/257/310/