Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications
Abstract
An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.
- Inventors:
-
- Downers Grove, IL
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- OSTI Identifier:
- 870842
- Patent Number(s):
- 5605171
- Assignee:
- University of Chicago (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- porous; silicon; embedded; tritium; stand-alone; prime; power; source; optoelectronic; applications; illumination; comprising; electrons; surface; interticies; total; porosity; range; 50; 90; disclosed; tritiated; photovoltaic; device; tritiated porous; source comprising; illumination source; porous silicon; power source; photovoltaic device; total porosity; electronic applications; stand-alone prime; optoelectronic applications; embedded tritium; prime power; /136/250/257/310/
Citation Formats
Tam, Shiu-Wing. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications. United States: N. p., 1997.
Web.
Tam, Shiu-Wing. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications. United States.
Tam, Shiu-Wing. Wed .
"Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications". United States. https://www.osti.gov/servlets/purl/870842.
@article{osti_870842,
title = {Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications},
author = {Tam, Shiu-Wing},
abstractNote = {An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}