DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

Abstract

An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Inventors:
Issue Date:
Research Org.:
Univ. of Chicago, IL (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672611
Patent Number(s):
5765680
Application Number:
PAN: 8-671,504
Assignee:
Univ. of Chicago, IL (United States)
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 16 Jun 1998
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; ELECTRO-OPTICAL EFFECTS; LIGHTING SYSTEMS; PHOTOVOLTAIC CELLS; POROUS MATERIALS; SILICON; TRITIUM

Citation Formats

Tam, S W. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications. United States: N. p., 1998. Web.
Tam, S W. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications. United States.
Tam, S W. Tue . "Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications". United States.
@article{osti_672611,
title = {Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications},
author = {Tam, S W},
abstractNote = {An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {6}
}

Patent:
Search for the full text at the U.S. Patent and Trademark Office Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)