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Title: Crystallization from high temperature solutions of Si in Cu/Al solvent

Abstract

A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.

Inventors:
;
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
288029
Patent Number(s):
5,544,616
Application Number:
PAN: 8-249,957
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 13 Aug 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; LIQUID PHASE EPITAXY; CRYSTAL GROWTH; COPPER; IMPURITIES; ALUMINIUM; PRECIPITATION

Citation Formats

Ciszek, T F, and Wang, T. Crystallization from high temperature solutions of Si in Cu/Al solvent. United States: N. p., 1996. Web.
Ciszek, T F, & Wang, T. Crystallization from high temperature solutions of Si in Cu/Al solvent. United States.
Ciszek, T F, and Wang, T. Tue . "Crystallization from high temperature solutions of Si in Cu/Al solvent". United States.
@article{osti_288029,
title = {Crystallization from high temperature solutions of Si in Cu/Al solvent},
author = {Ciszek, T F and Wang, T},
abstractNote = {A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {8}
}