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Title: Crystallization from high temperature solutions of Si in Cu/Al solvent

A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.
Inventors:
;
Issue Date:
OSTI Identifier:
288029
Assignee:
Midwest Research Inst., Kansas City, MO (United States) CHO; SCA: 360601; PA: EDB-96:135969; SN: 96001636038
Patent Number(s):
US 5,544,616/A/
Application Number:
PAN: 8-249,957
Contract Number:
AC02-83CH10093
Resource Relation:
Other Information: PBD: 13 Aug 1996
Research Org:
Midwest Research Institute; National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; LIQUID PHASE EPITAXY; CRYSTAL GROWTH; COPPER; IMPURITIES; ALUMINIUM; PRECIPITATION

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