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Title: Crystallization from high temperature solutions of Si in copper

Abstract

A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

Inventors:
 [1]
  1. (Evergreen, CO)
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
869314
Patent Number(s):
5314571
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
crystallization; temperature; solutions; copper; liquid; phase; epitaxy; method; forming; crystalline; layers; device; quality; silicon; 5x10; 16; cu; atoms; cc; impurity; comprising; preparing; saturated; solution; melt; 90; wt; range; 800; degree; 1400; inert; gas; immersing; substrate; supersaturating; lowering; holding; immersed; period; time; sufficient; growing; precipitate; form; layer; withdrawing; saturated solution; device quality; liquid solution; time sufficient; temperature range; liquid phase; inert gas; phase epitaxy; saturated liquid; quality silicon; cc impurity; crystalline layer; temperature solutions; epitaxy method; cu atoms; crystalline layers; /117/

Citation Formats

Ciszek, Theodore F. Crystallization from high temperature solutions of Si in copper. United States: N. p., 1994. Web.
Ciszek, Theodore F. Crystallization from high temperature solutions of Si in copper. United States.
Ciszek, Theodore F. Sat . "Crystallization from high temperature solutions of Si in copper". United States. https://www.osti.gov/servlets/purl/869314.
@article{osti_869314,
title = {Crystallization from high temperature solutions of Si in copper},
author = {Ciszek, Theodore F.},
abstractNote = {A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

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