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Title: Crystallization from high temperature solutions of Si in Cu/Al solvent

A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about to about C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
 [1];  [2]
  1. (Evergreen, CO)
  2. (Golden, CO)
Issue Date:
OSTI Identifier:
Midwest Research Institute (Kansas City, MO) CHO
Patent Number(s):
US 5544616
Application Number:
Contract Number:
Research Org:
Midwest Research Institute
Sponsoring Org:
Country of Publication:
United States
crystallization; temperature; solutions; cu; solvent; liquid; phase; epitaxy; method; forming; crystalline; layers; device; quality; silicon; times; 10; 16; atoms; cc; impurity; comprising; preparing; saturated; solution; 20; 40; range; 850; degree; 1100; inert; gas; immersing; partially; substrate; super; saturating; lowering; holding; period; time; sufficient; precipitate; form; layer; withdrawing; saturated solution; device quality; liquid solution; time sufficient; temperature range; liquid phase; inert gas; phase epitaxy; saturated liquid; quality silicon; cc impurity; crystalline layer; temperature solutions; epitaxy method; cu atoms; crystalline layers; /117/