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Title: Crystallization from high temperature solutions of Si in Cu/Al solvent

Abstract

A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

Inventors:
 [1];  [2]
  1. Evergreen, CO
  2. Golden, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
870552
Patent Number(s):
5544616
Application Number:
08/249,957
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
crystallization; temperature; solutions; cu; solvent; liquid; phase; epitaxy; method; forming; crystalline; layers; device; quality; silicon; times; 10; 16; atoms; cc; impurity; comprising; preparing; saturated; solution; 20; 40; range; 850; degree; 1100; inert; gas; immersing; partially; substrate; super; saturating; lowering; holding; period; time; sufficient; precipitate; form; layer; withdrawing; saturated solution; device quality; liquid solution; time sufficient; temperature range; liquid phase; inert gas; phase epitaxy; saturated liquid; quality silicon; cc impurity; crystalline layer; temperature solutions; epitaxy method; cu atoms; crystalline layers; /117/

Citation Formats

Ciszek, Theodore F, and Wang, Tihu. Crystallization from high temperature solutions of Si in Cu/Al solvent. United States: N. p., 1996. Web.
Ciszek, Theodore F, & Wang, Tihu. Crystallization from high temperature solutions of Si in Cu/Al solvent. United States.
Ciszek, Theodore F, and Wang, Tihu. Mon . "Crystallization from high temperature solutions of Si in Cu/Al solvent". United States. https://www.osti.gov/servlets/purl/870552.
@article{osti_870552,
title = {Crystallization from high temperature solutions of Si in Cu/Al solvent},
author = {Ciszek, Theodore F and Wang, Tihu},
abstractNote = {A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

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