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Title: Process for forming synapses in neural networks and resistor therefor

Abstract

Customizable neural network in which one or more resistors form each synapse is disclosed. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength. 5 figs.

Inventors:
Issue Date:
Research Org.:
University of California
OSTI Identifier:
264572
Patent Number(s):
5,538,915
Application Number:
PAN: 7-894,391
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 23 Jul 1996
Country of Publication:
United States
Language:
English
Subject:
99 MATHEMATICS, COMPUTERS, INFORMATION SCIENCE, MANAGEMENT, LAW, MISCELLANEOUS; NEURAL NETWORKS; DESIGN; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; LASER RADIATION

Citation Formats

Fu, C Y. Process for forming synapses in neural networks and resistor therefor. United States: N. p., 1996. Web.
Fu, C Y. Process for forming synapses in neural networks and resistor therefor. United States.
Fu, C Y. Tue . "Process for forming synapses in neural networks and resistor therefor". United States.
@article{osti_264572,
title = {Process for forming synapses in neural networks and resistor therefor},
author = {Fu, C Y},
abstractNote = {Customizable neural network in which one or more resistors form each synapse is disclosed. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {7}
}