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Title: Process for forming synapses in neural networks and resistor therefor

Patent ·
OSTI ID:870526
 [1]
  1. San Francisco, CA
+ Show Author Affiliations

Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
DOE Contract Number:
W-7405-ENG-48
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 5538915
OSTI ID:
870526
Country of Publication:
United States
Language:
English

References (3)

A laser direct write double-level-metal technology for rapid fabrication conference January 1990
An introduction to computing with neural nets journal January 1987
Resistive synaptic interconnects for electronic neural networks
  • Lamb, J. L.; Thakoor, A. P.; Moopenn, A.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 5, Issue 4 https://doi.org/10.1116/1.574607
journal July 1987

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Related Subjects

process
forming
synapses
neural
networks
resistor
customizable
network
resistors
form
synapse
synaptic
array
identical
simplifying
processing
issues
highly
doped
amorphous
silicon
material
create
extremely
resistances
occupying
spaces
connected
series
severable
conductor
uppermost
layer
reflectivity
laser
energy
typical
metal
conductors
desired
wavelength
metal conductor
neural network
amorphous silicon
laser energy
highly doped
neural networks
resistor material
metal conductors
uppermost layer
resistors form
synaptic array
forming synapses
metal conduct
neural net
processing issues
customizable neural
laser wavelength
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