Monolithic integrated quantum dot photonic integrated circuits

Bowers, John E.; Gossard, Arthur; Jung, Daehwan; Norman, Justin; Shang, Chen; Wan, Yating

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Title: Monolithic integrated quantum dot photonic integrated circuits

Abstract

A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Inventors:: Bowers, John E.; Gossard, Arthur; Jung, Daehwan; Norman, Justin; Shang, Chen; Wan, Yating

Issue Date:: 2023-07-04

Research Org.:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 2221947

Patent Number(s):: 11693178

Application Number:: 17/882,909

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G02B2006/12121 - {Laser}
G02B2006/12142 - {Modulator}
G02B2006/12178 - {Epitaxial growth}
G02B6/12004 - {Combinations of two or more optical elements}
G02B6/1225 - {comprising photonic band-gap structures or photonic lattices}
G02B6/13 - Integrated optical circuits characterised by the manufacturing method
G02B6/131 - {by using epitaxial growth

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S2301/173 - The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
H01S5/0021 - {Degradation or life time measurements}
H01S5/021 - {Silicon based substrates}
H01S5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
H01S5/0264 - {for monitoring the laser-output}
H01S5/0265 - {Intensity modulators
H01S5/3412 - {quantum box or quantum dash}
H01S5/50 - Amplifier structures not provided for in groups H01S5/02 - H01S5/30

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DOE Contract Number:: AR0000672

Resource Type:: Patent

Resource Relation:: Patent File Date: 08/08/2022

Country of Publication:: United States

Language:: English

Citation Formats


                    Bowers, John E., Gossard, Arthur, Jung, Daehwan, Norman, Justin, Shang, Chen, and Wan, Yating. Monolithic integrated quantum dot photonic integrated circuits.  United States: N. p., 2023. 
        Web.

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                    Bowers, John E., Gossard, Arthur, Jung, Daehwan, Norman, Justin, Shang, Chen, & Wan, Yating. Monolithic integrated quantum dot photonic integrated circuits.  United States.

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                    Bowers, John E., Gossard, Arthur, Jung, Daehwan, Norman, Justin, Shang, Chen, and Wan, Yating. Tue .  
        "Monolithic integrated quantum dot photonic integrated circuits".  United States.  https://www.osti.gov/servlets/purl/2221947.

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@article{osti_2221947,

  title        = {Monolithic integrated quantum dot photonic integrated circuits},

  author       = {Bowers, John E. and Gossard, Arthur and Jung, Daehwan and Norman, Justin and Shang, Chen and Wan, Yating},

  abstractNote = {A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2023},

  month        = {7}

}

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