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Title: Monolithic integrated quantum dot photonic integrated circuits

Abstract

A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1925067
Patent Number(s):
11435524
Application Number:
17/058,057
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
AR0000672
Resource Type:
Patent
Resource Relation:
Patent File Date: 05/24/2019
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Bowers, John E., Gossard, Arthur, Jung, Daehwan, Norman, Justin, Shang, Chen, and Wan, Yating. Monolithic integrated quantum dot photonic integrated circuits. United States: N. p., 2022. Web.
Bowers, John E., Gossard, Arthur, Jung, Daehwan, Norman, Justin, Shang, Chen, & Wan, Yating. Monolithic integrated quantum dot photonic integrated circuits. United States.
Bowers, John E., Gossard, Arthur, Jung, Daehwan, Norman, Justin, Shang, Chen, and Wan, Yating. Tue . "Monolithic integrated quantum dot photonic integrated circuits". United States. https://www.osti.gov/servlets/purl/1925067.
@article{osti_1925067,
title = {Monolithic integrated quantum dot photonic integrated circuits},
author = {Bowers, John E. and Gossard, Arthur and Jung, Daehwan and Norman, Justin and Shang, Chen and Wan, Yating},
abstractNote = {A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 06 00:00:00 EDT 2022},
month = {Tue Sep 06 00:00:00 EDT 2022}
}

Works referenced in this record:

Process for forming semiconductor quantum dots with superior structural and phological stability
patent-application, September 2004


Quantum dot semiconductor device
patent, November 2010


Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture
patent, June 2009