Title: Methods of exfoliating single crystal materials

Abstract

Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi₂Se₃ (0001) substrates in an MOCVD reactor.

Inventors:

Norman, Andrew Gordon; Melamed, Celeste Louise; Toberer, Eric Steven; McMahon, William Edwin

Issue Date:

Tue Apr 12 00:00:00 EDT 2022

Research Org.:

National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1892827

Patent Number(s):

11302531

Application Number:

17/003,194

Assignee:

Alliance for Sustainable Energy, LLC (Golden, CO); Colorado School of Mines (Golden, CO)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/18 - characterised by the substrate
C30B25/186 - {being specially pre-treated by, e.g. chemical or physical means}
C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C30B29/42 - Gallium arsenide
C30B29/48 - AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te}
C30B29/64 - Flat crystals, e.g. plates, strips or discs
C30B33/06 - Joining of crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02002 - {Preparing wafers}
H01L21/02032 - {by reclaiming or re-processing}
H01L21/02417 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02433 - {Crystal orientation}
H01L21/02477 - {Selenides}
H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02502 - {consisting of two layers}
H01L21/02516 - {Crystal orientation}
H01L21/02546 - {Arsenides}
H01L21/02598 - {monocrystalline}
H01L21/02609 - {Crystal orientation}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02658 - {Pretreatments
H01L21/02661 - {In-situ cleaning}
H01L31/1852 - {comprising a growth substrate not being an AIIIBV compound}
H01L31/1892 - {methods involving the use of temporary, removable substrates}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/544 - Solar cells from Group III-V materials

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:  

AC36-08GO28308

Resource Type:

Patent

Resource Relation:

Patent File Date: 08/26/2020

Country of Publication:

United States

Language:

English