Title: Method for fabricating embedded nanostructures with arbitrary shape

Abstract

A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.

Inventors:

Wang, George T.; Sapkota, Keshab R.; Jones, Kevin S.; Turner, Emily M.

Issue Date:

Tue Jan 11 00:00:00 EST 2022

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Florida, Gainesville, FL (United States)

Sponsoring Org.:

USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:

1892532

Patent Number(s):

11222950

Application Number:

16/852,763

Assignee:

National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM); University of Florida Research Foundation, Inc. (Gainesville, FL)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02603 - {Nanowires}
H01L21/02612 - {Formation types}
H01L21/02664 - {Aftertreatments
H01L29/0676 - {oriented perpendicular or at an angle to a substrate}
H01L29/068 - {comprising a junction}
H01L29/165 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/7613 - {Single electron transistors
H01L33/0054 - {for devices with an active region comprising only group IV elements}
H01L33/0058 - {comprising amorphous semiconductors}
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L33/08 - with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L33/18 - within the light emitting region
H01L33/34 - containing only elements of group IV of the periodic system

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DOE Contract Number:  

NA0003525

Resource Type:

Patent

Resource Relation:

Patent File Date: 04/20/2020

Country of Publication:

United States

Language:

English