Title: Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Abstract

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Inventors:

Majumdar, Arun ^[1]; Shakouri, Ali ^[2]; Sands, Timothy D ^[3]; Yang, Peidong ^[4]; Mao, Samuel S ^[4]; Russo, Richard E ^[5]; Feick, Henning ^[6]; Weber, Eicke R ^[7]; Kind, Hannes ^[8]; Huang, Michael ^[9]; Yan, Haoquan ^[10]; Wu, Yiying ^[10]; Fan, Rong ^[11]

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+ Show Inventor Affiliations

1. Orinda, CA
2. Santa Cruz, CA
3. Moraga, CA
4. Berkeley, CA
5. Walnut Creek, CA
6. Kensington, CA
7. Oakland, CA
8. Schaffhausen, CH
9. Los Angeles, CA
10. Albany, CA
11. El Cerrito, CA

Issue Date:

2010-11-16

Research Org.:

Univ. of California, Oakland, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1014896

Patent Number(s):

7834264

Application Number:

US Patent Application 11/645,236

Assignee:

The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

G02B6/107 - {Subwavelength-diameter waveguides, e.g. nanowires}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0237 - {Materials}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/0245 - {Silicon, silicon germanium, germanium}
H01L21/02521 - {Materials}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02554 - {Oxides}
H01L21/02603 - {Nanowires}
H01L21/02645 - {Seed materials}
H01L21/02653 - {Vapour-liquid-solid growth}
H01L2224/45565 - Single coating layer
H01L2224/45599 - Material
H01L2224/48 - of an individual wire connector
H01L24/45 - {of an individual wire connector}
H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/0673 - {oriented parallel to a substrate}
H01L29/0676 - {oriented perpendicular or at an angle to a substrate}
H01L29/068 - {comprising a junction}
H01L29/12 - characterised by the materials of which they are formed
H01L29/125 - {Quantum wire structures}
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/00011 - Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L2924/01004 - Beryllium [Be]
H01L2924/01005 - Boron [B]
H01L2924/01006 - Carbon [C]
H01L2924/0101 - Neon [Ne]
H01L2924/01013 - Aluminum [Al]
H01L2924/01014 - Silicon [Si]
H01L2924/01015 - Phosphorus [P]
H01L2924/01018 - Argon [Ar]
H01L2924/01019 - Potassium [K]
H01L2924/01022 - Titanium [Ti]
H01L2924/01023 - Vanadium [V]
H01L2924/01024 - Chromium [Cr]
H01L2924/01025 - Manganese [Mn]
H01L2924/01027 - Cobalt [Co]
H01L2924/01028 - Nickel [Ni]
H01L2924/0103 - Zinc [Zn]
H01L2924/01031 - Gallium [Ga]
H01L2924/01032 - Germanium [Ge]
H01L2924/01039 - Yttrium [Y]
H01L2924/01047 - Silver [Ag]
H01L2924/01051 - Antimony [Sb]
H01L2924/01052 - Tellurium [Te]
H01L2924/01058 - Cerium [Ce]
H01L2924/0106 - Neodymium [Nd]
H01L2924/01061 - Promethium [Pm]
H01L2924/01068 - Erbium [Er]
H01L2924/01074 - Tungsten [W]
H01L2924/01075 - Rhenium [Re]
H01L2924/01077 - Iridium [Ir]
H01L2924/01078 - Platinum [Pt]
H01L2924/01079 - Gold [Au]
H01L2924/01083 - Bismuth [Bi]
H01L2924/01084 - Polonium [Po]
H01L2924/04953 - TaN
H01L2924/10253 - Silicon [Si]
H01L2924/10329 - Gallium arsenide [GaAs]
H01L2924/12036 - PN diode
H01L2924/12041 - LED
H01L2924/12042 - LASER
H01L2924/1305 - Bipolar Junction Transistor [BJT]
H01L2924/1306 - Field-effect transistor [FET]
H01L2924/13062 - Junction field-effect transistor [JFET]
H01L2924/13091 - Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
H01L2924/14 - Integrated circuits
H01L2924/19042 - being an inductor
H01L2924/19043 - being a resistor
H01L2924/30107 - Inductance
H01L31/0352 - characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L33/18 - within the light emitting region
H01L33/24 - of the light emitting region, e.g. non-planar junction

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S5/341 - {Structures having reduced dimensionality, e.g. quantum wires}
H01S5/3412 - {quantum box or quantum dash}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/762 - Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
Y10S977/763 - formed along or from crystallographic terraces or ridges
Y10S977/764 - with specified packing density
Y10S977/765 - with specified cross-sectional profile, e.g. belt-shaped
Y10S977/951 - Laser

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/24994 - Fiber embedded in or on the surface of a polymeric matrix
Y10T428/249949 - Two or more chemically different fibers
Y10T428/29 - Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
Y10T428/2913 - Rod, strand, filament or fiber
Y10T428/2916 - including boron or compound thereof [not as steel]
Y10T428/292 - In coating or impregnation
Y10T428/2933 - Coated or with bond, impregnation or core
Y10T428/2958 - Metal or metal compound in coating
Y10T428/2973 - Particular cross section
Y10T428/298 - Physical dimension

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DOE Contract Number:  

AC03-76SF00098

Resource Type:

Patent

Country of Publication:

United States

Language:

English