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Title: Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
Inventors:
; ; ; ; ; ; ; ; ; ; ; ;
Issue Date:
OSTI Identifier:
1418827
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland, CA) LBNL
Patent Number(s):
9,881,999
Application Number:
12/488,310
Contract Number:
AC03-76SF00098
Resource Relation:
Patent File Date: 2009 Jun 19
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE

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