Silicon carbide power inverter/rectifier for electric machines
Abstract
The present disclosure involves a two stage inverter, a system for electrical power conversation, and a method of converting electrical power using silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). One example implementation includes using two or more SiC MOSFETs in series with each MOSFET having a gate terminal for triggering a state switch between an on (conducting) and off (non-conducting) state of the MOSFET. An AC terminal is connected between the series SiC MOSFETS, and the series SiC MOSFETs are connected across a DC bus and in parallel with one or more capacitors.
- Inventors:
- Issue Date:
- Research Org.:
- Calnetix Technologies, LLC, Cerritos, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1805485
- Patent Number(s):
- 10910957
- Application Number:
- 16/597,650
- Assignee:
- Calnetix Technologies, LLC (Cerritos, CA)
- DOE Contract Number:
- EE0007251
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10/09/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Shenoy, Suratkal P., Wei, Jinsheng, and Solis, Octavio. Silicon carbide power inverter/rectifier for electric machines. United States: N. p., 2021.
Web.
Shenoy, Suratkal P., Wei, Jinsheng, & Solis, Octavio. Silicon carbide power inverter/rectifier for electric machines. United States.
Shenoy, Suratkal P., Wei, Jinsheng, and Solis, Octavio. Tue .
"Silicon carbide power inverter/rectifier for electric machines". United States. https://www.osti.gov/servlets/purl/1805485.
@article{osti_1805485,
title = {Silicon carbide power inverter/rectifier for electric machines},
author = {Shenoy, Suratkal P. and Wei, Jinsheng and Solis, Octavio},
abstractNote = {The present disclosure involves a two stage inverter, a system for electrical power conversation, and a method of converting electrical power using silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). One example implementation includes using two or more SiC MOSFETs in series with each MOSFET having a gate terminal for triggering a state switch between an on (conducting) and off (non-conducting) state of the MOSFET. An AC terminal is connected between the series SiC MOSFETS, and the series SiC MOSFETs are connected across a DC bus and in parallel with one or more capacitors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {2}
}
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