Integrated silicon carbide diode rectifier circuits

Barlow, Matthew; Holmes, James A.

Title: Integrated silicon carbide diode rectifier circuits

Abstract

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.

Inventors:: Barlow, Matthew; Holmes, James A.

Issue Date:: 2020-07-21

Research Org.:: Ozark Integrated Circuits, Inc., Fayetteville, AR (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1735060

Patent Number(s):: 10720853

Application Number:: 16/183,115

Assignee:: Barlow, Matthew, Springdale, AR (United States)

Patent Classifications (CPCs):: H - ELECTRICITY H02 - GENERATION H02M - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02B - CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS

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H - ELECTRICITY H02 - GENERATION H02M - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS
H02M7/06 - using discharge tubes without control electrode or semiconductor devices without control electrode

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02B - CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
Y02B70/10 - Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/0605 - {integrated circuits made of compound material, e.g. AIIIBV}

H - ELECTRICITY H02 - GENERATION H02M - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS
H02M7/066 - {particular circuits having a special characteristic}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/0814 - {Diodes only}
H01L21/8213 - {the substrate being a semiconductor, using SiC technology

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DOE Contract Number:: SC0017131

Resource Type:: Patent

Resource Relation:: Patent File Date: 11/07/2018

Country of Publication:: United States

Language:: English

Citation Formats


                    Barlow, Matthew, and Holmes, James A. Integrated silicon carbide diode rectifier circuits.  United States: N. p., 2020. 
        Web.

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                    Barlow, Matthew, & Holmes, James A. Integrated silicon carbide diode rectifier circuits.  United States.

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                    Barlow, Matthew, and Holmes, James A. Tue .  
        "Integrated silicon carbide diode rectifier circuits".  United States.  https://www.osti.gov/servlets/purl/1735060.

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@article{osti_1735060,

  title        = {Integrated silicon carbide diode rectifier circuits},

  author       = {Barlow, Matthew and Holmes, James A.},

  abstractNote = {An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2020},

  month        = {7}

}

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Works referenced in this record:

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Title: Integrated silicon carbide diode rectifier circuits

Abstract

Citation Formats

Method for providing semiconductors having self-aligned ion implant patent, May 2011

Iridium interfacial stack (IRIS) patent, April 2015

N channel JFET based digital logic gate structure patent, April 2013

Polysilon contacts to IC mesas patent, June 1990

Method for providing semiconductors having self-aligned ion implant patent, September 2014

N channel JFET based digital logic gate structure patent, March 2010

Method for providing semiconductors having self-aligned ion implant
patent, May 2011

Iridium interfacial stack (IRIS)
patent, April 2015

N channel JFET based digital logic gate structure
patent, April 2013

Polysilon contacts to IC mesas
patent, June 1990

Method for providing semiconductors having self-aligned ion implant
patent, September 2014

N channel JFET based digital logic gate structure
patent, March 2010