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Title: Integrated silicon carbide diode rectifier circuits

Abstract

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.

Inventors:
;
Issue Date:
Research Org.:
Ozark Integrated Circuits, Inc., Fayetteville, AR (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1735060
Patent Number(s):
10720853
Application Number:
16/183,115
Assignee:
Barlow, Matthew, Springdale, AR (United States)
Patent Classifications (CPCs):
H - ELECTRICITY H02 - GENERATION H02M - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02B - CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
DOE Contract Number:  
SC0017131
Resource Type:
Patent
Resource Relation:
Patent File Date: 11/07/2018
Country of Publication:
United States
Language:
English

Citation Formats

Barlow, Matthew, and Holmes, James A. Integrated silicon carbide diode rectifier circuits. United States: N. p., 2020. Web.
Barlow, Matthew, & Holmes, James A. Integrated silicon carbide diode rectifier circuits. United States.
Barlow, Matthew, and Holmes, James A. Tue . "Integrated silicon carbide diode rectifier circuits". United States. https://www.osti.gov/servlets/purl/1735060.
@article{osti_1735060,
title = {Integrated silicon carbide diode rectifier circuits},
author = {Barlow, Matthew and Holmes, James A.},
abstractNote = {An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}

Works referenced in this record:

Iridium interfacial stack (IRIS)
patent, April 2015


N channel JFET based digital logic gate structure
patent, April 2013


Polysilon contacts to IC mesas
patent, June 1990


N channel JFET based digital logic gate structure
patent, March 2010