Integrated silicon carbide diode rectifier circuits
Abstract
An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.
- Inventors:
- Issue Date:
- Research Org.:
- Ozark Integrated Circuits, Inc., Fayetteville, AR (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1735060
- Patent Number(s):
- 10720853
- Application Number:
- 16/183,115
- Assignee:
- Barlow, Matthew, Springdale, AR (United States)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H02 - GENERATION H02M - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS
- DOE Contract Number:
- SC0017131
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 11/07/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Barlow, Matthew, and Holmes, James A. Integrated silicon carbide diode rectifier circuits. United States: N. p., 2020.
Web.
Barlow, Matthew, & Holmes, James A. Integrated silicon carbide diode rectifier circuits. United States.
Barlow, Matthew, and Holmes, James A. Tue .
"Integrated silicon carbide diode rectifier circuits". United States. https://www.osti.gov/servlets/purl/1735060.
@article{osti_1735060,
title = {Integrated silicon carbide diode rectifier circuits},
author = {Barlow, Matthew and Holmes, James A.},
abstractNote = {An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 21 00:00:00 EDT 2020},
month = {Tue Jul 21 00:00:00 EDT 2020}
}
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