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Title: Integrated silicon carbide diode rectifier circuits

Abstract

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.

Inventors:
;
Issue Date:
Research Org.:
US Dept. of Energy (USDOE), Washington, DC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1892624
Patent Number(s):
11251717
Application Number:
16/899,941
Assignee:
Barlow, Matthew, Springdale, AR (United States)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H02 - GENERATION H02M - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS
DOE Contract Number:  
SC0017131; STTR-GTC-0024
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/12/2020
Country of Publication:
United States
Language:
English

Citation Formats

Barlow, Matthew, and Holmes, James A. Integrated silicon carbide diode rectifier circuits. United States: N. p., 2022. Web.
Barlow, Matthew, & Holmes, James A. Integrated silicon carbide diode rectifier circuits. United States.
Barlow, Matthew, and Holmes, James A. Tue . "Integrated silicon carbide diode rectifier circuits". United States. https://www.osti.gov/servlets/purl/1892624.
@article{osti_1892624,
title = {Integrated silicon carbide diode rectifier circuits},
author = {Barlow, Matthew and Holmes, James A.},
abstractNote = {An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {2}
}

Works referenced in this record:

Iridium interfacial stack (IRIS)
patent, April 2015


Converting Alternating Current Power to Direct Current Power
patent-application, February 2017


Integrated silicon carbide diode rectifier circuits
patent, July 2020


Single-Event Latch-Up Prevention Techniques for a Semiconductor Device
patent-application, January 2014


Polysilon contacts to IC mesas
patent, June 1990


Photo-Select memory Switch
patent, October 1972