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Title: Ferroelectric opening switch

Abstract

A ferroelectric opening switch is enabled by controlled polarization switching via nucleation in a ferroelectric material, such as BaTiO3, Pb(Zr,Ti)O3, LiNbO3, LiTaO3, or variants thereof. For example, nucleation sites can be provided by mechanical seeding, grain boundaries, or optical illumination. The invention can be used as an opening switch in large scale pulsed-power systems. However, the switch can also be used in compact pulsed-power systems (e.g., as drivers for high power microwave systems), as passive fault limiters for high voltage dc (HVDC) systems, and/or in other high power applications.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576260
Patent Number(s):
10431280
Application Number:
15/137,539
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Apr 25
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION

Citation Formats

Brennecka, Geoffrey L., Glover, Steven F., Pena, Gary, and Zutavern, Fred J. Ferroelectric opening switch. United States: N. p., 2019. Web.
Brennecka, Geoffrey L., Glover, Steven F., Pena, Gary, & Zutavern, Fred J. Ferroelectric opening switch. United States.
Brennecka, Geoffrey L., Glover, Steven F., Pena, Gary, and Zutavern, Fred J. Tue . "Ferroelectric opening switch". United States. https://www.osti.gov/servlets/purl/1576260.
@article{osti_1576260,
title = {Ferroelectric opening switch},
author = {Brennecka, Geoffrey L. and Glover, Steven F. and Pena, Gary and Zutavern, Fred J.},
abstractNote = {A ferroelectric opening switch is enabled by controlled polarization switching via nucleation in a ferroelectric material, such as BaTiO3, Pb(Zr,Ti)O3, LiNbO3, LiTaO3, or variants thereof. For example, nucleation sites can be provided by mechanical seeding, grain boundaries, or optical illumination. The invention can be used as an opening switch in large scale pulsed-power systems. However, the switch can also be used in compact pulsed-power systems (e.g., as drivers for high power microwave systems), as passive fault limiters for high voltage dc (HVDC) systems, and/or in other high power applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 01 00:00:00 EDT 2019},
month = {Tue Oct 01 00:00:00 EDT 2019}
}

Works referenced in this record:

Returning of Ferroelectric Media Built-in-Bias
patent-application, April 2010


Thin Film and Method for Manufacturing Same
patent-application, June 2006