Ferroelectric opening switch
Abstract
A ferroelectric opening switch is enabled by controlled polarization switching via nucleation in a ferroelectric material, such as BaTiO3, Pb(Zr,Ti)O3, LiNbO3, LiTaO3, or variants thereof. For example, nucleation sites can be provided by mechanical seeding, grain boundaries, or optical illumination. The invention can be used as an opening switch in large scale pulsed-power systems. However, the switch can also be used in compact pulsed-power systems (e.g., as drivers for high power microwave systems), as passive fault limiters for high voltage dc (HVDC) systems, and/or in other high power applications.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1576260
- Patent Number(s):
- 10431280
- Application Number:
- 15/137,539
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Apr 25
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 30 DIRECT ENERGY CONVERSION
Citation Formats
Brennecka, Geoffrey L., Glover, Steven F., Pena, Gary, and Zutavern, Fred J. Ferroelectric opening switch. United States: N. p., 2019.
Web.
Brennecka, Geoffrey L., Glover, Steven F., Pena, Gary, & Zutavern, Fred J. Ferroelectric opening switch. United States.
Brennecka, Geoffrey L., Glover, Steven F., Pena, Gary, and Zutavern, Fred J. Tue .
"Ferroelectric opening switch". United States. https://www.osti.gov/servlets/purl/1576260.
@article{osti_1576260,
title = {Ferroelectric opening switch},
author = {Brennecka, Geoffrey L. and Glover, Steven F. and Pena, Gary and Zutavern, Fred J.},
abstractNote = {A ferroelectric opening switch is enabled by controlled polarization switching via nucleation in a ferroelectric material, such as BaTiO3, Pb(Zr,Ti)O3, LiNbO3, LiTaO3, or variants thereof. For example, nucleation sites can be provided by mechanical seeding, grain boundaries, or optical illumination. The invention can be used as an opening switch in large scale pulsed-power systems. However, the switch can also be used in compact pulsed-power systems (e.g., as drivers for high power microwave systems), as passive fault limiters for high voltage dc (HVDC) systems, and/or in other high power applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 01 00:00:00 EDT 2019},
month = {Tue Oct 01 00:00:00 EDT 2019}
}
Works referenced in this record:
Geometric shape control of thin film ferroelectrics and resulting structures
patent, June 2000
- McKee, Rodney A.; Walker, Frederick J.
- US Patent Document 6,080,235
Returning of Ferroelectric Media Built-in-Bias
patent-application, April 2010
- Franklin, Nathan; Tran, Quan A.; Ma, Qing
- US Patent Application 12/260045; 20100085863
Thin Film and Method for Manufacturing Same
patent-application, June 2006
- Kimurra, Kuniko; Kobayashi, Kei; Yamada, Hirofumi
- US Patent Application 10/527712; 20060121203