skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

Abstract

A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

Inventors:
 [1];  [1];  [2];  [1];  [3];  [4];  [5]
  1. Knoxville, TN
  2. Oak Ridge, TN
  3. Raleigh, NC
  4. Malden, MA
  5. Arlington, MA
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
919404
Patent Number(s):
7292768
Application Number:
11/409,740
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Kalinin, Sergei V, Baddorf, Arthur P, Lee, Ho Nyung, Shin, Junsoo, Gruverman, Alexei L, Karapetian, Edgar, and Kachanov, Mark. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching. United States: N. p., 2007. Web.
Kalinin, Sergei V, Baddorf, Arthur P, Lee, Ho Nyung, Shin, Junsoo, Gruverman, Alexei L, Karapetian, Edgar, & Kachanov, Mark. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching. United States.
Kalinin, Sergei V, Baddorf, Arthur P, Lee, Ho Nyung, Shin, Junsoo, Gruverman, Alexei L, Karapetian, Edgar, and Kachanov, Mark. Tue . "Ultrahigh density ferroelectric storage and lithography by high order ferroic switching". United States. https://www.osti.gov/servlets/purl/919404.
@article{osti_919404,
title = {Ultrahigh density ferroelectric storage and lithography by high order ferroic switching},
author = {Kalinin, Sergei V and Baddorf, Arthur P and Lee, Ho Nyung and Shin, Junsoo and Gruverman, Alexei L and Karapetian, Edgar and Kachanov, Mark},
abstractNote = {A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {11}
}

Patent:

Save / Share:

Works referenced in this record:

Higher Order Ferroic Switching Induced by Scanning Force Microscopy
journal, June 2001