Magnetic memory using single domain switching by direct current
Abstract
A method for implementing miniaturization of magnetic random access memory (MRAM) and a magnetic memory using single domain switching by direct current are provided. The magnetic memory preferably includes a half-circle or U-shaped architecture with an exchange biasing pad, such as a FeMn exchange biasing pad that effectively generates a head-to-head magnetization configuration. The magnetic memory also includes nanometer scale notches in order to minimize magnetostatic interaction between a single domain memory element and the spin current sources and to effectively trap the magnetic domain wall. Reading the bit can be carried out by anisotropic magnetoresistance, or by other means of determining the magnetization orientation through resistance measurements, such as a spin valve or a magnetic tunneling junction.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Chicago, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531511
- Patent Number(s):
- 7042036
- Application Number:
- 10/912,708
- Assignee:
- The University of Chicago (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2004-08-05
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 97 MATHEMATICS AND COMPUTING
Citation Formats
Chung, Seok-Hwan, and Hoffmann, Axel F. Magnetic memory using single domain switching by direct current. United States: N. p., 2006.
Web.
Chung, Seok-Hwan, & Hoffmann, Axel F. Magnetic memory using single domain switching by direct current. United States.
Chung, Seok-Hwan, and Hoffmann, Axel F. Tue .
"Magnetic memory using single domain switching by direct current". United States. https://www.osti.gov/servlets/purl/1531511.
@article{osti_1531511,
title = {Magnetic memory using single domain switching by direct current},
author = {Chung, Seok-Hwan and Hoffmann, Axel F.},
abstractNote = {A method for implementing miniaturization of magnetic random access memory (MRAM) and a magnetic memory using single domain switching by direct current are provided. The magnetic memory preferably includes a half-circle or U-shaped architecture with an exchange biasing pad, such as a FeMn exchange biasing pad that effectively generates a head-to-head magnetization configuration. The magnetic memory also includes nanometer scale notches in order to minimize magnetostatic interaction between a single domain memory element and the spin current sources and to effectively trap the magnetic domain wall. Reading the bit can be carried out by anisotropic magnetoresistance, or by other means of determining the magnetization orientation through resistance measurements, such as a spin valve or a magnetic tunneling junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {5}
}
Works referenced in this record:
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Writing method for magnetic random access memory using a bipolar junction transistor
patent, July 2004
- Kim, Chang Shuk; Kang, Hee Bok; Kyung, Christine H.
- US Patent Document 6,768,670
Works referencing / citing this record:
Plasma dicing and semiconductor devices formed thereof
patent, January 2013
- Engelhardt, Manfred
- US Patent Document 8,361,884
Domain wall motion element and magnetic random access memory
patent, February 2013
- Ishiwata, Nobuyuki; Suzuki, Tetsuhiro; Ohshima, Norikazu
- US Patent Document 8,379,429
Magnetic random access memory
patent, April 2012
- Fukami, Shunsuke; Ishiwata, Nobuyuki; Suzuki, Tetsuhiro
- US Patent Document 8,149,615