skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Magnetic memory using single domain switching by direct current

Abstract

A method for implementing miniaturization of magnetic random access memory (MRAM) and a magnetic memory using single domain switching by direct current are provided. The magnetic memory preferably includes a half-circle or U-shaped architecture with an exchange biasing pad, such as a FeMn exchange biasing pad that effectively generates a head-to-head magnetization configuration. The magnetic memory also includes nanometer scale notches in order to minimize magnetostatic interaction between a single domain memory element and the spin current sources and to effectively trap the magnetic domain wall. Reading the bit can be carried out by anisotropic magnetoresistance, or by other means of determining the magnetization orientation through resistance measurements, such as a spin valve or a magnetic tunneling junction.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Chicago, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531511
Patent Number(s):
7042036
Application Number:
10/912,708
Assignee:
The University of Chicago (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Patent
Resource Relation:
Patent File Date: 2004-08-05
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING

Citation Formats

Chung, Seok-Hwan, and Hoffmann, Axel F. Magnetic memory using single domain switching by direct current. United States: N. p., 2006. Web.
Chung, Seok-Hwan, & Hoffmann, Axel F. Magnetic memory using single domain switching by direct current. United States.
Chung, Seok-Hwan, and Hoffmann, Axel F. Tue . "Magnetic memory using single domain switching by direct current". United States. https://www.osti.gov/servlets/purl/1531511.
@article{osti_1531511,
title = {Magnetic memory using single domain switching by direct current},
author = {Chung, Seok-Hwan and Hoffmann, Axel F.},
abstractNote = {A method for implementing miniaturization of magnetic random access memory (MRAM) and a magnetic memory using single domain switching by direct current are provided. The magnetic memory preferably includes a half-circle or U-shaped architecture with an exchange biasing pad, such as a FeMn exchange biasing pad that effectively generates a head-to-head magnetization configuration. The magnetic memory also includes nanometer scale notches in order to minimize magnetostatic interaction between a single domain memory element and the spin current sources and to effectively trap the magnetic domain wall. Reading the bit can be carried out by anisotropic magnetoresistance, or by other means of determining the magnetization orientation through resistance measurements, such as a spin valve or a magnetic tunneling junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {5}
}

Patent:

Save / Share: