Magnetoelectric memory cells with domain-wall-mediated switching
Abstract
A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Nebraska, Lincoln, NE (United States); THE JOHN HOPKINS UNIVERSITY, Baltimore, MD (United States); INTEL CORPORATION, Santa Clara, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1489788
- Patent Number(s):
- 10090034
- Application Number:
- 15/807,369
- Assignee:
- BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA (Lincoln, NE); THE JOHN HOPKINS UNIVERSITY (Baltimore, MD); INTEL CORPORATION (Santa Clara, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- FG02-08ER46544; SC0014189
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017 Nov 08
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Belashchenko, Kirill D., Tchernyshyov, Oleg, Kovalev, Alexey, and Nikonov, Dmitri E. Magnetoelectric memory cells with domain-wall-mediated switching. United States: N. p., 2018.
Web.
Belashchenko, Kirill D., Tchernyshyov, Oleg, Kovalev, Alexey, & Nikonov, Dmitri E. Magnetoelectric memory cells with domain-wall-mediated switching. United States.
Belashchenko, Kirill D., Tchernyshyov, Oleg, Kovalev, Alexey, and Nikonov, Dmitri E. Tue .
"Magnetoelectric memory cells with domain-wall-mediated switching". United States. https://www.osti.gov/servlets/purl/1489788.
@article{osti_1489788,
title = {Magnetoelectric memory cells with domain-wall-mediated switching},
author = {Belashchenko, Kirill D. and Tchernyshyov, Oleg and Kovalev, Alexey and Nikonov, Dmitri E.},
abstractNote = {A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}
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Works referenced in this record:
Ferroelectric Memory Using Multiferroics
patent-application, December 2009
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Nanosecond-Timescale Low-Error Switching of 3-Terminal Magnetic Tunnel Junction Circuits Through Dynamic In-Plane-Field Assisted Spin-Hall Effect
patent-application, February 2018
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