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Title: Magnetoelectric memory cells with domain-wall-mediated switching

Abstract

A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States); THE JOHN HOPKINS UNIVERSITY, Baltimore, MD (United States); INTEL CORPORATION, Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1489788
Patent Number(s):
10090034
Application Number:
15/807,369
Assignee:
BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA (Lincoln, NE); THE JOHN HOPKINS UNIVERSITY (Baltimore, MD); INTEL CORPORATION (Santa Clara, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
DOE Contract Number:  
FG02-08ER46544; SC0014189
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Nov 08
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Belashchenko, Kirill D., Tchernyshyov, Oleg, Kovalev, Alexey, and Nikonov, Dmitri E. Magnetoelectric memory cells with domain-wall-mediated switching. United States: N. p., 2018. Web.
Belashchenko, Kirill D., Tchernyshyov, Oleg, Kovalev, Alexey, & Nikonov, Dmitri E. Magnetoelectric memory cells with domain-wall-mediated switching. United States.
Belashchenko, Kirill D., Tchernyshyov, Oleg, Kovalev, Alexey, and Nikonov, Dmitri E. Tue . "Magnetoelectric memory cells with domain-wall-mediated switching". United States. https://www.osti.gov/servlets/purl/1489788.
@article{osti_1489788,
title = {Magnetoelectric memory cells with domain-wall-mediated switching},
author = {Belashchenko, Kirill D. and Tchernyshyov, Oleg and Kovalev, Alexey and Nikonov, Dmitri E.},
abstractNote = {A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

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