Near-infrared light emitting device using semiconductor nanocrystals
Abstract
A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.
- Inventors:
- Issue Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1432811
- Patent Number(s):
- 9935240
- Application Number:
- 14/101,867
- Assignee:
- Massachusetts Institute of Technology (Cambridge, MA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- SC0001088
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Dec 12
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, and Scherer, Jennifer. Near-infrared light emitting device using semiconductor nanocrystals. United States: N. p., 2018.
Web.
Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, & Scherer, Jennifer. Near-infrared light emitting device using semiconductor nanocrystals. United States.
Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, and Scherer, Jennifer. Tue .
"Near-infrared light emitting device using semiconductor nanocrystals". United States. https://www.osti.gov/servlets/purl/1432811.
@article{osti_1432811,
title = {Near-infrared light emitting device using semiconductor nanocrystals},
author = {Supran, Geoffrey J.S. and Song, Katherine W. and Hwang, Gyuweon and Correa, Raoul Emile and Shirasaki, Yasuhiro and Bawendi, Moungi G. and Bulovic, Vladimir and Scherer, Jennifer},
abstractNote = {A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 03 00:00:00 EDT 2018},
month = {Tue Apr 03 00:00:00 EDT 2018}
}
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